Metal halide perovskites for resistive switching memory devices and artificial synapses

2019 ◽  
Vol 7 (25) ◽  
pp. 7476-7493 ◽  
Author(s):  
Bixin Li ◽  
Wei Hui ◽  
Xueqin Ran ◽  
Yingdong Xia ◽  
Fei Xia ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Metal Halide ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Metal Halide Perovskite ◽  
Recent Developments ◽  
Halide Perovskites ◽  
Halide Perovskite ◽  
Switching Memory

This article highlights recent developments of emerging metal halide perovskite based resistive switching memory devices and artificial synapses.

Recent developments in fabrication and performance of metal halide perovskite field-effect transistors

2020 ◽  
Vol 8 (47) ◽  
pp. 16691-16715
Author(s):  
Yu Liu ◽  
Ping-An Chen ◽  
Yuanyuan Hu
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Halide ◽  
Device Performance ◽  
Metal Halide Perovskite ◽  
Recent Developments ◽  
Halide Perovskites ◽  
Halide Perovskite ◽  
And Performance

Recent developments in fabrication strategies and device performance of field-effect transistors based on metal halide perovskites are reviewed.

scholarly journals Tailoring the electron and hole dimensionality to achieve efficient and stable metal halide perovskite scintillators

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Zhifang Tan ◽  
Jincong Pang ◽  
Guangda Niu ◽  
Jun-Hui Yuan ◽  
Kan-Hao Xue ◽  
...  
Keyword(s):  
Water Solubility ◽  
Radiation Stability ◽  
Metal Halide ◽  
Lead Free ◽  
X Ray ◽  
Metal Halide Perovskite ◽  
Bonding Interaction ◽  
Halide Perovskites ◽  
Halide Perovskite ◽  
Low X

Abstract Metal halide perovskites have recently been reported as excellent scintillators for X-ray detection. However, perovskite based scintillators are susceptible to moisture and oxygen atmosphere, such as the water solubility of CsPbBr3, and oxidation vulnerability of Sn2+, Cu+. The traditional metal halide scintillators (NaI: Tl, LaBr3, etc.) are also severely restricted by their high hygroscopicity. Here we report a new kind of lead free perovskite with excellent water and radiation stability, Rb2Sn1-x Te x Cl6. The equivalent doping of Te could break the in-phase bonding interaction between neighboring octahedra in Rb2SnCl6, and thus decrease the electron and hole dimensionality. The optimized Te content of 5% resulted in high photoluminescence quantum yield of 92.4%, and low X-ray detection limit of 0.7 µGyair s−1. The photoluminescence and radioluminescence could be maintained without any loss when immersing in water or after 480,000 Gy radiations, outperforming previous perovskite and traditional metal halides scintillators.

Characterization of SiOx/HfOx Bilayer Resistive-Switching Memory Devices

2016 ◽  
Vol 72 (2) ◽  
pp. 25-33 ◽  
Author(s):  
Y.-C. Chen ◽  
Y.-F. Chang ◽  
X. Wu ◽  
M. Guo ◽  
B. Fowler ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Switching Memory

Photo-induced negative differential resistance and carrier-transport mechanisms in Bi2FeCrO6 resistive switching memory devices

2021 ◽  
Vol 9 (39) ◽  
pp. 13755-13760
Author(s):  
Songcheng Hu ◽  
Zhenhua Tang ◽  
Li Zhang ◽  
Dijie Yao ◽  
Zhigang Liu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Negative Differential Resistance ◽  
Carrier Transport ◽  
Electronic Devices ◽  
Differential Resistance ◽  
Memory Devices ◽  
Transport Mechanisms ◽  
Resistive Switching Memory ◽  
Potential Applications ◽  
Switching Memory

The new effects induced by light in materials have important potential applications in optoelectronic multifunctional electronic devices.

All-inorganic perovskite Cs4PbBr6 thin films in optoelectronic resistive switching memory devices with a logic application

2019 ◽  
Vol 45 (5) ◽  
pp. 5724-5730 ◽  
Author(s):  
Huaizu Cai ◽  
Meimei Lao ◽  
Jun Xu ◽  
Yukai Chen ◽  
Chujie Zhong ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Memory Devices ◽  
Inorganic Perovskite ◽  
Resistive Switching Memory ◽  
Switching Memory

Top-Down Synthesis of Hollow Graphene Nanostructures for Use in Resistive Switching Memory Devices

2017 ◽  
Vol 3 (10) ◽  
pp. 1700264 ◽  
Author(s):  
Gopinathan Anoop ◽  
Tae Yeon Kim ◽  
Hye Jeong Lee ◽  
Varij Panwar ◽  
Jeong Hun Kwak ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Top Down ◽  
Resistive Switching Memory ◽  
Switching Memory ◽  
Graphene Nanostructures

Flexible nonvolatile resistive switching memory devices based on Bi2Te3 nanosheets films

2018 ◽  
Vol 52 (7) ◽  
pp. 075103 ◽  
Author(s):  
Yongsheng Bao ◽  
Zhiang Ren ◽  
Hongxing Li ◽  
Kai Huang
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Switching Memory

Linkage and donor–acceptor effects on resistive switching memory devices of 4-(N-carbazolyl)triphenylamine-based polymers

RSC Advances ◽  
2016 ◽  
Vol 6 (34) ◽  
pp. 28815-28819 ◽  
Author(s):  
Tzu-Tien Huang ◽  
Chia-Liang Tsai ◽  
Sheng-Huei Hsiao ◽  
Guey-Sheng Liou
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Linkage Effect ◽  
Donor Acceptor ◽  
Switching Memory

In order to gain deeper insight about the linkage effect and donor–acceptor effect on memory behavior (from DRAM to WORM), 4-(N-carbazolyl)triphenylamine-based polyimides and polyamides were synthesized and their memory behaviours were investigated.

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