Lead-free, air-stable hybrid organic–inorganic perovskite resistive switching memory with ultrafast switching and multilevel data storage

Nanoscale ◽  
2018 ◽  
Vol 10 (18) ◽  
pp. 8578-8584 ◽  
Author(s):  
Bohee Hwang ◽  
Jang-Sik Lee
Keyword(s):  
Data Storage ◽  
Resistive Switching ◽  
Lead Free ◽  
Multilevel Data ◽  
Resistive Switching Memory ◽  
Fast Switching ◽  
Free Air ◽  
Stable Hybrid ◽  
Switching Memory

The resistive switching memory based on a lead-free bismuth halide perovskite exhibits fast switching, multilevel data storage, and long-term air stability.

A synaptic device built in one diode–one resistor (1D–1R) architecture with intrinsic SiOx-based resistive switching memory

2016 ◽  
Vol 1 (4) ◽  
Author(s):  
Yao-Feng Chang ◽  
Burt Fowler ◽  
Ying-Chen Chen ◽  
Fei Zhou ◽  
Chih-Hung Pan ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Silicon Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Long Term Potentiation ◽  
Spike Timing ◽  
Oxide Semiconductor ◽  
Resistive Switching Memory ◽  
Term Potentiation ◽  
Switching Memory

Abstract We realize a device with biological synaptic behaviors by integrating silicon oxide (SiOx) resistive switching memory with Si diodes to further minimize total synaptic power consumption due to sneak-path currents and demonstrate the capability for spike-induced synaptic behaviors, representing critical milestones for the use of SiO2-based materials in future neuromorphic computing applications. Biological synaptic behaviors such as long-term potentiation, long-term depression, and spike-timing dependent plasticity are demonstrated systemically with comprehensive investigation of spike waveform analyses and represent a potential application for SiOx-based resistive switching materials. The resistive switching SET transition is modeled as hydrogen (proton) release from the (SiH)2 defect to generate the hydrogenbridge defect, and the RESET transition is modeled as an electrochemical reaction (proton capture) that re-forms (SiH)2. The experimental results suggest a simple, robust approach to realize programmable neuromorphic chips compatible with largescale complementary metal-oxide semiconductor manufacturing technology.

scholarly journals Resistive Switching Memory: Lead‐Free Dual‐Phase Halide Perovskites for Preconditioned Conducting‐Bridge Memory (Small 41/2020)

Small ◽  
2020 ◽  
Vol 16 (41) ◽  
pp. 2070228
Author(s):  
Ji Su Han ◽  
Quyet Van Le ◽  
Hyojung Kim ◽  
Yoon Jung Lee ◽  
Da Eun Lee ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Lead Free ◽  
Dual Phase ◽  
Resistive Switching Memory ◽  
Halide Perovskites ◽  
Conducting Bridge ◽  
Switching Memory

scholarly journals Inorganic–organic hybrid polymer with multiple redox for high-density data storage

2014 ◽  
Vol 5 (9) ◽  
pp. 3404-3408 ◽  
Author(s):  
Benlin Hu ◽  
Chengyuan Wang ◽  
Jiangxin Wang ◽  
Junkuo Gao ◽  
Kai Wang ◽  
...  
Keyword(s):  
Data Storage ◽  
Resistive Switching ◽  
High Density ◽  
Hybrid Polymer ◽  
Density Data ◽  
Resistive Switching Memory ◽  
Organic Hybrid ◽  
Switching Memory

A multi-redox polyoxometalate-based hybrid polymer has been demonstrated to show multilevel resistive switching memory behaviors.

Layered (n-C4H9NH3)2CsAgBiBr7 Perovskite for Bipolar Resistive Switching Memory with High ON/OFF Ratio

Nanoscale ◽  
2021 ◽  
Author(s):  
So-Yeon Kim ◽  
June-Mo Yang ◽  
Sun-Ho Lee ◽  
Nam-Gyu Park
Keyword(s):  
Resistive Switching ◽  
Lead Free ◽  
Potential Candidate ◽  
Bipolar Resistive Switching ◽  
3 Dimensional ◽  
Resistive Switching Memory ◽  
Halide Perovskite ◽  
Switching Memory

Lead-based halide perovskite has been proposed as a potential candidate for resistive switching memristor due to high ON/OFF ratio along with millivolt-level low operational voltage. However, lead-free perovskites with 3-dimensional...

Multistate data storage in solution-processed NiO-based resistive switching memory

2018 ◽  
Vol 33 (11) ◽  
pp. 115007 ◽  
Author(s):  
Jinxing Chu ◽  
Ya Li ◽  
Xihua Fan ◽  
Huihong Shao ◽  
Weijie Duan ◽  
...  
Keyword(s):  
Data Storage ◽  
Resistive Switching ◽  
Solution Processed ◽  
Resistive Switching Memory ◽  
Switching Memory

scholarly journals Demonstration of Ultra-Fast Switching in Nanometallic Resistive Switching Memory Devices

2016 ◽  
Vol 2016 ◽  
pp. 1-7 ◽  
Author(s):  
Xiang Yang
Keyword(s):  
Resistive Switching ◽  
Pulse Width ◽  
Low Voltage ◽  
Memory Device ◽  
Switching Voltage ◽  
Resistive Switching Memory ◽  
Fast Switching ◽  
Technology Nodes ◽  
Device Property ◽  
Switching Memory

Interdependency of switching voltage and time creates a dilemma/obstacle for most resistive switching memories, which indicates low switching voltage and ultra-fast switching time cannot be simultaneously achieved. In this paper, an ultra-fast (sub-100 ns) yet low switching voltage resistive switching memory device (“nanometallic ReRAM”) was demonstrated. Experimental switching voltage is found independent of pulse width (intrinsic device property) when the pulse is long but shows abrupt time dependence (“cliff”) as pulse width approaches characteristic RC time of memory device (extrinsic device property). Both experiment and simulation show that the onset of cliff behavior is dependent on physical device size and parasitic resistance, which is expected to diminish as technology nodes shrink down. We believe this study provides solid evidence that nanometallic resistive switching memory can be reliably operated at low voltage and ultra-fast regime, thus beneficial to future memory technology.

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