Titanium oxide (TiO2): transport properties in non-stoichiometric TiO(2-x): conductivity and defect distribution

2005 ◽  
pp. 1-7
Author(s):  
Keyword(s):  
Transport Properties ◽  
Titanium Oxide ◽  
Defect Distribution

scholarly journals Investigation of transport properties of porous coatings from nanoparticles of aluminum oxide

2021 ◽  
Vol 2088 (1) ◽  
pp. 012022
Author(s):  
N S Ivanov ◽  
Yu A Kuzma-Kichta ◽  
A V Lavrikov
Keyword(s):  
Silicon Carbide ◽  
Aluminum Oxide ◽  
Transport Properties ◽  
Titanium Oxide ◽  
Optical Microscope ◽  
Porous Coatings

Abstract In this work, coatings of nanoparticles of aluminum oxide are investigated. Photos were obtained using an electron and optical microscope. A method is proposed for the formation of a coating of nanoparticles with and without agglomerates. The transport properties of nanoparticles of aluminum oxide, silicon carbide, titanium oxide and diamond have been investigated. The effect of agglomerates of nanoparticles on the rise of liquid has been determined.

Structure and transport properties of titanium oxide (Ti2O, TiO1+, and Ti3O5) thin films

2019 ◽  
Vol 786 ◽  
pp. 607-613 ◽  
Author(s):  
Yunjie Fan ◽  
Chao Zhang ◽  
Xiang Liu ◽  
Yue Lin ◽  
Guanyin Gao ◽  
...  
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Titanium Oxide

Spectroscopic Diagnostics of Tokamaks

1988 ◽  
Vol 102 ◽  
pp. 165-174
Author(s):  
C. de Michelis
Keyword(s):  
Transport Properties ◽  
Power Losses ◽  
Spectroscopic Diagnostics ◽  
Important Concern

AbstractImpurities being an important concern in tokamaks, spectroscopy plays a key role in their understanding. Techniques for the evaluation of concentrations, power losses and transport properties are surveyed, and a few developments are outlined.

Structure and Orientation of As Precipitates in LT-MBE Grown GaAs

1991 ◽  
Vol 49 ◽  
pp. 900-901 ◽  
Author(s):  
Alain Claverie ◽  
Zuzanna Liliental-Weber
Keyword(s):  
Transport Properties ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Low Temperatures ◽  
Lattice Parameter ◽  
Crystalline Quality ◽  
Insulating Properties ◽  
Lt Gaas

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.

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