Numerical Simulation of Self-heating InGaP/GaAs Heterojunction Bipolar Transistors

Lecture Notes in Computer Science - Computational Science – ICCS 2005 ◽

10.1007/11428862_41 ◽

2005 ◽

pp. 292-299

Author(s):

Yiming Li ◽

Kuen-Yu Huang

Keyword(s):

Numerical Simulation ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

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Numerical simulation of AlGaAs/GaAs heterojunction bipolar transistors with various collector parameters

IEEE Transactions on Electron Devices ◽

10.1109/16.22465 ◽

1989 ◽

Vol 36 (4) ◽

pp. 617-624 ◽

Author(s):

K. Horio ◽

Y. Iwatsu ◽

H. Yanai

Keyword(s):

Numerical Simulation ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors

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Ensemble Monte Carlo analysis of self-heating effects in graded heterojunction bipolar transistors

Journal of Applied Physics ◽

10.1063/1.366911 ◽

1998 ◽

Vol 83 (4) ◽

pp. 1869-1877 ◽

Author(s):

T. Kumar ◽

M. Cahay ◽

K. Roenker

Keyword(s):

Monte Carlo ◽

Heterojunction Bipolar Transistors ◽

Monte Carlo Analysis ◽

Bipolar Transistors ◽

Ensemble Monte Carlo ◽

Self Heating ◽

Heating Effects

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Analysis of the large-signal characteristics of power heterojunction bipolar transistors exhibiting self-heating effects

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/22.566634 ◽

1997 ◽

Vol 45 (4) ◽

pp. 534-542 ◽

Author(s):

A. Samelis ◽

D. Pavlidis

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Large Signal ◽

Self Heating ◽

Heating Effects ◽

Signal Characteristics

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Two-dimensional numerical analysis of heterojunction bipolar transistors including the effects of graded layer, setback layer and self-heating

Solid-State Electronics ◽

10.1016/0038-1101(95)00142-5 ◽

1996 ◽

Vol 39 (2) ◽

pp. 193-199 ◽

Author(s):

A. Kager ◽

J.J. Liou

Keyword(s):

Numerical Analysis ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Two Dimensional ◽

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Evaluation of the hot carrier/ionizing radiation induced effects on the RF characteristics of low-complexity SiGe heterojunction bipolar transistors by numerical simulation

Microelectronics Reliability ◽

10.1016/s0026-2714(00)00175-x ◽

2000 ◽

Vol 40 (8-10) ◽

pp. 1579-1584 ◽

Author(s):

J Kuchenbecker ◽

M Borgarino ◽

A Coustou ◽

R Plana ◽

J Graffeuil ◽

...

Keyword(s):

Numerical Simulation ◽

Ionizing Radiation ◽

Heterojunction Bipolar Transistors ◽

Low Complexity ◽

Bipolar Transistors ◽

Hot Carrier ◽

Radiation Induced

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Thermal effects on the characteristics of AlGaAs/GaAs heterojunction bipolar transistors using two-dimensional numerical simulation

IEEE Transactions on Electron Devices ◽

10.1109/16.249421 ◽

1993 ◽

Vol 40 (1) ◽

pp. 35-43 ◽

Author(s):

L.L. Liou ◽

J.L. Ebel ◽

C.I. Huang

Keyword(s):

Numerical Simulation ◽

Heterojunction Bipolar Transistors ◽

Thermal Effects ◽

Bipolar Transistors ◽

Two Dimensional

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Analysis of negative differential resistance (NDR) characteristics induced by self-heating effects in power Si/SiGe/Si double heterojunction bipolar transistors (DHBTs)

Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. ◽

10.1109/icsict.2004.1435270 ◽

2005 ◽

Author(s):

Zhang Wan-rong ◽

Zhu Lian-cang ◽

Yang Jing-wei ◽

Liu Hai-jiang ◽

He Yan ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

Negative Differential Resistance ◽

Differential Resistance ◽

Bipolar Transistors ◽

Self Heating ◽

Heating Effects ◽

Double Heterojunction

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Direct extraction and numerical simulation of the base and collector delay times in double heterojunction bipolar transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.766867 ◽

1999 ◽

Vol 46 (6) ◽

pp. 1081-1086 ◽

Author(s):

M. Sotoodeh ◽

A.H. Khalid ◽

Hong Sheng ◽

F.A. Amin ◽

T. Gokdemir ◽

...

Keyword(s):

Numerical Simulation ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Direct Extraction ◽

Delay Times ◽

Double Heterojunction

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Effects of self-heating and thermal-coupling on the performance of AlGaAs/GaAs heterojunction bipolar transistors

Proceedings 1996 IEEE Hong Kong Electron Devices Meeting ◽

10.1109/hkedm.1996.566303 ◽

2002 ◽

Author(s):

J.J. Liou ◽

C.I. Huang

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Thermal Coupling ◽

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Proposal of and Numerical Simulation of Hg1-xCdxTe Heterojunction Bipolar Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.25.444 ◽

1986 ◽

Vol 25 (Part 1, No. 3) ◽

pp. 444-448 ◽

Author(s):

Kunihiro Sakamoto ◽

Yoichi Okabe

Keyword(s):

Numerical Simulation ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors

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