Proceedings 1996 IEEE Hong Kong Electron Devices Meeting
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A constant power heating circuit for integrated gas sensor application

Proceedings 1996 IEEE Hong Kong Electron Devices Meeting ◽

10.1109/hkedm.1996.566293 ◽

2002 ◽

Author(s):

S.S.W. Chan ◽

P.C.H. Chan

Keyword(s):

Gas Sensor ◽

Constant Power ◽

Sensor Application

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Failure of effective-channel length extraction methods due to the effect of the relative doping level of source and drain in short-channel LDD MOSFETs

Proceedings 1996 IEEE Hong Kong Electron Devices Meeting ◽

10.1109/hkedm.1996.566323 ◽

2002 ◽

Author(s):

Z. Latif ◽

A. Ortiz-Conde ◽

J.J. Liou ◽

F.J.G. Sanchez ◽

W. Wong

Keyword(s):

Doping Level ◽

Extraction Methods ◽

Channel Length ◽

Short Channel ◽

Effective Channel

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Area-efficient layout design for output transistors with consideration of ESD reliability

Proceedings 1996 IEEE Hong Kong Electron Devices Meeting ◽

10.1109/hkedm.1996.566324 ◽

2002 ◽

Author(s):

Ming-Dou Ker ◽

Chung-Yu Wu ◽

Chien-Chang Huang ◽

Hun-Hsien Chang ◽

Chau-Neng Wu ◽

...

Keyword(s):

Layout Design ◽

Area Efficient

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A comparison of ∂-doped quantum well structures for power FET applications

Proceedings 1996 IEEE Hong Kong Electron Devices Meeting ◽

10.1109/hkedm.1996.566308 ◽

2002 ◽

Author(s):

J.M. Roberts ◽

J.J. Harris ◽

M. Hopkinson ◽

C. Roberts

Keyword(s):

Quantum Well ◽

Quantum Well Structures

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ESD reliability of thinner gate oxide in deep-submicron low-voltage CMOS technology

Proceedings 1996 IEEE Hong Kong Electron Devices Meeting ◽

10.1109/hkedm.1996.566328 ◽

2002 ◽

Author(s):

Ming-Dou Ker ◽

Chung-Yu Wu ◽

Hun-Hsien Chang ◽

Chien-Chang Huang ◽

Chau-Neng Wu ◽

...

Keyword(s):

Low Voltage ◽

Gate Oxide ◽

Cmos Technology ◽

Deep Submicron

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Effect of base potential distribution on thermal runaway and the power limitation of the heterojunction bipolar transistor with circular dot geometry

Proceedings 1996 IEEE Hong Kong Electron Devices Meeting ◽

10.1109/hkedm.1996.566306 ◽

2002 ◽

Author(s):

L.L. Liou ◽

T. Jenkins ◽

C.I. Huang

Keyword(s):

Potential Distribution ◽

Thermal Runaway ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor

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Comparison and generalization of recent surface potential models for fully depleted SOI MOSFETs

Proceedings 1996 IEEE Hong Kong Electron Devices Meeting ◽

10.1109/hkedm.1996.566299 ◽

2002 ◽

Author(s):

G.F. Niu ◽

R.M.M. Chen ◽

G. Ruan

Keyword(s):

Surface Potential ◽

Potential Models ◽

Fully Depleted

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On the physical mechanism contributing to the difference between drain and source resistances in short-channel MOSFETs

Proceedings 1996 IEEE Hong Kong Electron Devices Meeting ◽

10.1109/hkedm.1996.566311 ◽

2002 ◽

Author(s):

A. Ortiz-Conde ◽

J.J. Liou ◽

R. Narayanan ◽

F.J.G. Sanchez

Keyword(s):

Physical Mechanism ◽

Short Channel ◽

The Difference

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A TaSi/sub 2/ masked and plasma etched self-aligned SOS FET

Proceedings 1996 IEEE Hong Kong Electron Devices Meeting ◽

10.1109/hkedm.1996.566300 ◽

2002 ◽

Author(s):

T.H. Weng

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Thin film transistors based on sputtered silicon and gate oxide films

Proceedings 1996 IEEE Hong Kong Electron Devices Meeting ◽

10.1109/hkedm.1996.566302 ◽

2002 ◽

Cited By ~ 1

Author(s):

E.V. Jelenkovic ◽

K.Y. Tong ◽

C.W. Ong

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Films ◽

Gate Oxide

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Proceedings 1996 IEEE Hong Kong Electron Devices MeetingLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

A constant power heating circuit for integrated gas sensor application

Failure of effective-channel length extraction methods due to the effect of the relative doping level of source and drain in short-channel LDD MOSFETs

Area-efficient layout design for output transistors with consideration of ESD reliability

A comparison of ∂-doped quantum well structures for power FET applications

ESD reliability of thinner gate oxide in deep-submicron low-voltage CMOS technology

Effect of base potential distribution on thermal runaway and the power limitation of the heterojunction bipolar transistor with circular dot geometry

Comparison and generalization of recent surface potential models for fully depleted SOI MOSFETs

On the physical mechanism contributing to the difference between drain and source resistances in short-channel MOSFETs

A TaSi/sub 2/ masked and plasma etched self-aligned SOS FET

Thin film transistors based on sputtered silicon and gate oxide films

Proceedings 1996 IEEE Hong Kong Electron Devices Meeting
Latest Publications