Particle Reduction on Silicon Wafers as a Result of Isopropyl Alcohol Vapor Displacement drying after Wet Processing

The vapor phase decomposition of isopropyl alcohol has been studied from 210 to 365 °C on manganese(II) oxide. Rates of conversion to acetone and propylene were measured with partial pressures of isopropyl alcohol from 0.3 to 22 mm. The catalyst selectivity towards dehydrogenation was around 0.80 between 320 and 365 °C while at 306 °C it was somewhat less and depended on the alcohol partial pressure. Propylene and hydrogen additions had no effect on the reaction rate while the reaction order with respect to isopropyl alcohol partial pressure was 0.4 to 0.6 except at 306 °C when it decreased with increase in the alcohol partial pressure. The effects of acetone and water additions were shown respectively to be exerted mainly on the dehydrogenation and dehydration reactions while at acetone pressures above 4 mm, considerable amounts of by-products including mesityl oxide and heavier ketones were clearly detected. The apparent activation energy of the overall decomposition as calculated from the experimental rates was 26 ± 0.5 kcal mol−1. The results have been interpreted to be in general agreement with the concept that the rate-limiting step is linked to the direct interactions on the catalyst surface and it has been established that the reaction is significantly more complex than previously recognized. The physical properties of the manganese(II) oxide were determined by X-ray and nitrogen adsorption techniques while infrared, n.m.r., and gas chromatographic methods were used to analyze the products of catalysis.

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The Dielectric Constant of Isopropyl Alcohol Vapor

The Journal of Chemical Physics ◽

10.1063/1.1749948 ◽

1937 ◽

Vol 5 (10) ◽

pp. 828-830 ◽

Cited By ~ 4

Author(s):

J. D. Stranathan

Keyword(s):

Dielectric Constant ◽

Isopropyl Alcohol ◽

Alcohol Vapor

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Performance of trickling bed microbial fuel cell treating isopropyl alcohol vapor: Effects of shock-load and shut-down episodes

Chemosphere ◽

10.1016/j.chemosphere.2019.02.149 ◽

2019 ◽

Vol 224 ◽

pp. 168-175 ◽

Cited By ~ 3

Author(s):

Shu-Hui Liu ◽

Hsin-Hui Lin ◽

Shin Wen ◽

Chi-Wen Lin

Keyword(s):

Fuel Cell ◽

Microbial Fuel Cell ◽

Isopropyl Alcohol ◽

Shock Load ◽

Alcohol Vapor

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Effect of Isopropyl Alcohol Concentration and Etching Time on Wet Chemical Anisotropic Etching of Low-Resistivity Crystalline Silicon Wafer

International Journal of Analytical Chemistry ◽

10.1155/2017/7542870 ◽

2017 ◽

Vol 2017 ◽

pp. 1-9 ◽

Cited By ~ 9

Author(s):

Eyad Abdur-Rahman ◽

Ibrahim Alghoraibi ◽

Hassan Alkurdi

Keyword(s):

Silicon Wafer ◽

Isopropyl Alcohol ◽

Crystalline Silicon ◽

Visible Region ◽

Anisotropic Etching ◽

Silicon Wafers ◽

Integrating Sphere ◽

Etching Time ◽

Total Reflectance ◽

Wet Chemical

A micropyramid structure was formed on the surface of a monocrystalline silicon wafer (100) using a wet chemical anisotropic etching technique. The main objective was to evaluate the performance of the etchant based on the silicon surface reflectance. Different isopropyl alcohol (IPA) volume concentrations (2, 4, 6, 8, and 10%) and different etching times (10, 20, 30, 40, and 50 min) were selected to study the total reflectance of silicon wafers. The other parameters such as NaOH concentration (12% wt.), the temperature of the solution (81.5°C), and range of stirrer speeds (400 rpm) were kept constant for all processes. The surface morphology of the wafer was analyzed by optical microscopy and atomic force microscopy (AFM). The AFM images confirmed a well-uniform pyramidal structure with various average pyramid sizes ranging from 1 to 1.6 μm. A UV-Vis spectrophotometer with integrating sphere was used to obtain the total reflectivity. The textured silicon wafers show high absorbance in the visible region. The optimum texture-etching parameters were found to be 4–6% vol. IPA and 40 min at which the average total reflectance of the silicon wafer was reduced to 11.22%.

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