A New Method for Evaluating X-ray Diffraction Peak Broadening with Engineering Applications

1988 ◽  
pp. 277-286 ◽  
Author(s):  
Masanori Kurita
1987 ◽  
Vol 31 ◽  
pp. 277-286 ◽  
Author(s):  
Masanori Kurita

AbstractA new method is proposed for evaluating rapidly the diffraction peak broadening by using the standard deviation of a Gaussian function approximating the diffraction peak. This value, called the Gaussian curve parameter (GCF), is given byThe use of the GCP permits rapid and nondestructive measurement of plastic strain and hardness of quenched and tempered steels with an automated X-ray stress analyzer using a personal computer. The GCP increases with increasing hardness of quenched and tempered steels. It also increases with increasing plastic strain by stretching. Furthermore, the GCP can be used for rapidly evaluating hardening of quenched steels.


2019 ◽  
Vol 43 (5) ◽  
pp. 1903-1911 ◽  
Author(s):  
Ahmed A. Al-Tabbakh ◽  
Nilgun Karatepe ◽  
Aseel B. Al-Zubaidi ◽  
Aida Benchaabane ◽  
Natheer B. Mahmood

2009 ◽  
Vol 42 (4) ◽  
pp. 673-680 ◽  
Author(s):  
Valeriy A. Luchnikov ◽  
Dimitri A. Ivanov

The diffraction peak position, width and intensity distribution are calculated for the case of a helicoidally twisted crystalline lamella, both analytically and numerically. It is shown that the diffraction peak broadening depends on the orientation of the corresponding reciprocal-space vector with respect to the helicoid axis and the normal to the lamellar basal plane. The equatorial peaks, which are close to the normal direction to the lamellar basal plane, are characterized by the highest azimuthal width. By contrast, the reflections positioned close to the lamellar surface have the smallest azimuthal width. For non-equatorial peaks in the proximity of the twisting axis the intensity has an unusual asymmetric shape. The shape of the microbeam, as well as its position and direction with respect to the lamella, influences the shape of the diffraction peaks in reciprocal space and their appearance in two-dimensional diffractograms. The proposed approach can be useful, for example, for the interpretation of microbeam diffractograms of banded polymer spherulites.


2004 ◽  
Vol 51 (1) ◽  
pp. 59-63 ◽  
Author(s):  
Sanjay K. Rai ◽  
Anish Kumar ◽  
Vani Shankar ◽  
T. Jayakumar ◽  
K. Bhanu Sankara Rao ◽  
...  

1998 ◽  
Vol 13 (2) ◽  
pp. 451-456 ◽  
Author(s):  
C. Vázquez-Vázquez ◽  
P. Kögerler ◽  
M. A. López-Quintela ◽  
R. D. Sánchez ◽  
J. Rivas

The study of submicroscopic particles in already known systems has resulted in a renewed interest due to the large differences found in their properties when the particle size is reduced, and because of possible new technological applications. In this work we report the preparation of LaFeO3 particles by the sol-gel route, starting from a solution of the corresponding metallic nitrates and using urea as gelificant agent. Gels were decomposed at 200 °C and calcined 3 h at several temperatures, T, in the range 250–1000 °C. The samples were structurally characterized by x-ray diffraction (XRD) showing that the orthoferrite crystallizes at T as low as 315 °C. From the x-ray diffraction peak broadening, the particle size was determined. The size increases from 60 to 300 nm as the calcination T increases. Infrared spectroscopy was used to characterize gels and calcined samples. From these studies a mechanism for the gel formation is proposed. Study of the magnetic properties of LaFeO3 particles shows the presence of a ferromagnetic component which diminishes as the calcination temperature increases, vanishing at T = 1000 °C.


Clay Minerals ◽  
1999 ◽  
Vol 34 (4) ◽  
pp. 601-617 ◽  
Author(s):  
M. Jaboyedoff ◽  
B. Kübler ◽  
Ph. Thélin

AbstractThe Scherrer equation links the measured width of an X-ray diffraction peak (Scherrer width, SW) to the number of stacked cells (N) in the direction normal to the diffracting planes. The formula is only valid for one d-value occurring in the coherently diffracting domain. This equation can be modified for weakly swelling mixed-layer minerals. This assumes that the peak broadening caused by the mixed-layering is proportional to the amount of swelling component (S) and that the effects of size and mixed-layering are additive.If two SW can be measured on XRD patterns from samples treated in two different ways (such as air dried or glycolated), N and S can be determined. This equation is applicable to illite-smectite mixed-layer minerals with high illitic content. The results are most accurate for N>30. The use of Scherrer's equation is discussed.


1993 ◽  
Vol 8 (1) ◽  
pp. 2-6 ◽  
Author(s):  
Davor Balzar ◽  
Hassel Ledbetter ◽  
Alexana Roshko

An X-ray diffraction peak-broadening analysis of four oxides is described: La2CuO4 and La1.85M0.15CuO4 (M = Ca,Ba,Sr) high-Tc superconductors. The diffraction line profiles were fitted with a convolution of specimen and instrumental functions, and the specimen peakbroadening angular dependence was analyzed with the Warren-Averbach method. It was found that microstrains and incoherently diffracting domains are highly anisotropic. In the superconductors, stacking-fault probability increases with increasing Tc; microstrain decreases. In La2CuO4, different broadening of (h00) and (0k0) reflections is not caused by stacking faults; it might arise from lower crystallographic symmetry.


2008 ◽  
Vol 41 (1) ◽  
pp. 191-197
Author(s):  
Kiichi Nakashima ◽  
Takashi Matsuoka

A method for simply identifying the X-ray diffraction peak broadening caused by tilt and twist distributions through analysis of theirhkldependence is proposed. The development of a new general formulation for thehkl-dependence analysis is presented. This makes thehkl-dependence analysis generally applicable to any material with any type of crystal structure. It also makes it possible to analyze thehkldependence of broadening in terms of whole profile shapes, which improves the reliability of the analysis. Another advantage of the formulation is that the analysis procedures for broadening due to both tilt and twist distributions can be derived in a straightforward manner from the same general version. Owing to these advantages, the method is applicable to GaN-based epitaxial films. The method for twist distributions is experimentally demonstrated using GaN epitaxial films on sapphire substrates.


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