Electron Impact Ionisation of Atoms and Molecules

2000 ◽  
pp. 103-119
Author(s):  
S. P. Khare ◽  
Surekha Tomar
Keyword(s):  
Electron Impact ◽  
Atoms And Molecules ◽  
Impact Ionisation

Electron Impact Ionisation of Be+

2018 ◽  
Vol 8 (4) ◽  
pp. 17-20
Author(s):  
Brij Mohan Prasad Singh ◽  
Sujeet Kumar ◽  
S. K. Shrivastava
Keyword(s):  
Electron Impact ◽  
Impact Ionisation

The R-matrix method for electron impact ionisation

1987 ◽  
Vol 20 (13) ◽  
pp. 3191-3200 ◽  
Author(s):  
K Bartschat ◽  
P G Burke
Keyword(s):  
Electron Impact ◽  
Matrix Method ◽  
R Matrix ◽  
Impact Ionisation

scholarly journals Ionization of atoms and molecules by electron impact: a three body wave treatment

2015 ◽  
Vol 635 (5) ◽  
pp. 052053
Author(s):  
S Houamer ◽  
C Dal Cappello ◽  
M Chinoune
Keyword(s):  
Electron Impact ◽  
Body Wave ◽  
Atoms And Molecules ◽  
Wave Treatment ◽  
Three Body

A New Type of Cluster-Ion Source for Thin Film Deposition

1990 ◽  
Vol 206 ◽  
Author(s):  
Hellmut Haberland ◽  
Martin Karrais ◽  
Martin Mall
Keyword(s):  
Electron Impact ◽  
Plane Surface ◽  
Thin Film Deposition ◽  
Ion Source ◽  
Film Deposition ◽  
Cluster Ions ◽  
Cluster Ion ◽  
Impact Ionisation ◽  
Aggregation Technique ◽  
High Degree

ABSTRACTAtoms are gas discharge sputtered from a solid target. They are condensed to form clusters using the gas aggregation technique. An intense beam of clusters of all solid materials can be obtained. Up to 80 % of the clusters can be ionised without using additional electron impact ionisation. Total deposition rates vary between 1 and 1000 Å per second depending on cluster diameter, which can be varied between 3 and 500 nm. Thin films of Al, Cu, and Mo have been produced so far. For non accelerated beams a weakly adhering mostly coulored deposit is obtained. Accelerating the cluster ions this changes to a strongly adhering film, having a shiny metallic appearance, and a very sharp and plane surface as seen in an electron microscope. The advantages compared to Kyoto ICB-method are: easy control of the cluster size, no electron impact ionisation, high degree of ionisation, and sputtering is used instead of thermal evaporation, which allows the use of high melting point materials.

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