Time Resolved Spectra and Small Signal Gain in HF: An Experimental and Theoretical Investigation

1984 ◽  
pp. 193-202
Author(s):  
P. E. Sojka ◽  
W. K. Jaul ◽  
R. L. Kerber
2018 ◽  
Vol 10 (9) ◽  
pp. 999-1010 ◽  
Author(s):  
Michele Squartecchia ◽  
Tom K. Johansen ◽  
Jean-Yves Dupuy ◽  
Virginio Midili ◽  
Virginie Nodjiadjim ◽  
...  

AbstractIn this paper, we report the analysis, design, and implementation of stacked transistors for power amplifiers realized on InP Double Heterojunction Bipolar Transistors (DHBTs) technology. A theoretical analysis based on the interstage matching between all the single transistors has been developed starting from the small-signal equivalent circuit. The analysis has been extended by including large-signal effects and layout-related limitations. An evaluation of the maximum number of transistors for positive incremental power and gain is also carried out. To validate the analysis, E-band three- and four-stacked InP DHBT matched power cells have been realized for the first time as monolithic microwave integrated circuits (MMICs). For the three-stacked transistor, a small-signal gain of 8.3 dB, a saturated output power of 15 dBm, and a peak power added efficiency (PAE) of 5.2% have been obtained at 81 GHz. At the same frequency, the four-stacked transistor achieves a small-signal gain of 11.5 dB, a saturated output power of 14.9 dBm and a peak PAE of 3.8%. A four-way combined three-stacked MMIC power amplifier has been implemented as well. It exhibits a linear gain of 8.1 dB, a saturated output power higher than 18 dBm, and a PAE higher than 3% at 84 GHz.


1974 ◽  
Vol 25 (10) ◽  
pp. 602-605 ◽  
Author(s):  
G. T. Schappert ◽  
E. E. Stark

2008 ◽  
Vol 40 (1) ◽  
pp. 88-91 ◽  
Author(s):  
S.W. Harun ◽  
H.A. Abdul-Rashid ◽  
S.Z. Muhd-Yassin ◽  
M.K. Abd-Rahman ◽  
K.K. Jayapalan ◽  
...  

2017 ◽  
Author(s):  
Xin Tang ◽  
Jian Wang ◽  
Zhaoyang Chen ◽  
Chengyou Lin ◽  
Yingchun Ding

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