Defect Production and Stoichiometry in A-15 Superconductors

Die in der Werkstückebene vorliegende Kraftverteilung beeinflusst den Umformprozess maßgeblich. Deren Kenntnis ist die Grundlage für die wirksame Kompensation von maschinen- oder werkzeugseitigen Einflüssen, um eine ausschussfreie Teilefertigung zu erzielen. Der Fachbeitrag stellt einen modularen Ansatz für eine wirkstellennahe und gleichzeitig werkzeugunabhängige Kraftmessung vor. Die erfasste Kraftverteilung kann der Maschinensteuerung zur Verfügung gestellt oder über mobile Endgeräte angezeigt werden.   The force distribution in forming tools influences the deep drawing process significantly. The metrological detection is the base for the effective compensation of machine- or tool-caused impacts on the zero-defect production of deep drawing parts. This article presents a modular approach for the tool-independent force distribution measurement close to the process. The captured distribution can be provided to the machine control or can be shown on mobile devices.

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Surface and Near-Surface Atom Dynamics During Low Energy Xe Ion Bombardment of Si and Fcc Surfaces

MRS Proceedings ◽

10.1557/proc-193-301 ◽

1990 ◽

Vol 193 ◽

Cited By ~ 3

Author(s):

M. V. R. Murty ◽

H. S. Lee ◽

Harry A. Atwater

Keyword(s):

Molecular Dynamics ◽

Surface Layer ◽

Ion Bombardment ◽

Low Energy ◽

Surface Processes ◽

Defect Production ◽

Near Surface ◽

Qualitative Nature ◽

Dynamics Simulations ◽

Atom Dynamics

ABSTRACTSurface and near-surface processes have been studied during low energy Xe ion bombardment of Si (001) and fcc surfaces using molecular dynamics simulations. Defect production is enhanced near the surface of smooth Si (001) surfaces with respect to the bulk in the energy range 20–150 eV, but is not confined exclusively to the surface layer. The extent and qualitative nature of bombardment-induced dissociation of small fcc islands on an otherwise smooth fcc (001) surface is found to depend strongly on island cohesive energy.

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Damage in High Energy Light Ions Irradiated Silicon Carbide

MRS Proceedings ◽

10.1557/proc-510-175 ◽

1998 ◽

Vol 510 ◽

Author(s):

P. Leveque ◽

S. Godey ◽

P.O. Renault ◽

E. Ntsoenzok ◽

J.F. Barbot

Keyword(s):

Silicon Carbide ◽

Surface Layer ◽

Energy Transfer ◽

High Energy ◽

Alpha Particles ◽

Defect Production ◽

Majority Carrier ◽

Reflectivity Spectra ◽

Light Ions ◽

Compensation Layer

AbstractCommercial n-type 4H-SiC wafers were implanted with doses of MeV alpha particles, high enough to cause majority carrier modification. Analysis of infrared reflectivity spectra shows that the implanted crystals can be divided into three layers: a surface layer of about 30 nm followed by a compensation layer where the energy transfer of the incident particles is low and an overdoping layer in the region of maximum defect production, i.e. near the theoretical mean range of ions Rp

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