Damage in High Energy Light Ions Irradiated Silicon Carbide

1998 ◽  
Vol 510 ◽  
Author(s):  
P. Leveque ◽  
S. Godey ◽  
P.O. Renault ◽  
E. Ntsoenzok ◽  
J.F. Barbot

AbstractCommercial n-type 4H-SiC wafers were implanted with doses of MeV alpha particles, high enough to cause majority carrier modification. Analysis of infrared reflectivity spectra shows that the implanted crystals can be divided into three layers: a surface layer of about 30 nm followed by a compensation layer where the energy transfer of the incident particles is low and an overdoping layer in the region of maximum defect production, i.e. near the theoretical mean range of ions Rp

1999 ◽  
Vol 40 (5) ◽  
pp. 428-430 ◽  
Author(s):  
Syouhei Taniguchi ◽  
Akiharu Kitahara ◽  
Shuichi Wakayama

2013 ◽  
Vol 58 (2) ◽  
pp. 619-624 ◽  
Author(s):  
M. Szafarska ◽  
J. Iwaszko ◽  
K. Kudła ◽  
I. Łegowik

The main aim of the study was the evaluation of magnesium alloy surface treatment effectiveness using high-energy heat sources, i.e. a Yb-YAG Disk Laser and the GTAW method. The AZ91 and AM60 commercial magnesium alloys were subject to surface layer modification. Because of the physicochemical properties of the materials studied in case of the GTAW method, it was necessary to provide the welding stand with additional equipment. A novel two-torch set with torches operating in tandem was developed within the experiment. The effectiveness of specimen remelting using a laser and the GTAW method was verified based on macro- and microscopic examinations as well as in X-ray phase analysis and hardness measurements. In addition, the remelting parameters were optimised. The proposed treatment methodology enabled the achieving of the intended result and effective modification of a magnesium alloy surface layer.


2021 ◽  
Vol 7 (9) ◽  
pp. eabe2209
Author(s):  
S. Lamon ◽  
Y. Wu ◽  
Q. Zhang ◽  
X. Liu ◽  
M. Gu

Nanoscale optical writing using far-field super-resolution methods provides an unprecedented approach for high-capacity data storage. However, current nanoscale optical writing methods typically rely on photoinitiation and photoinhibition with high beam intensity, high energy consumption, and short device life span. We demonstrate a simple and broadly applicable method based on resonance energy transfer from lanthanide-doped upconversion nanoparticles to graphene oxide for nanoscale optical writing. The transfer of high-energy quanta from upconversion nanoparticles induces a localized chemical reduction in graphene oxide flakes for optical writing, with a lateral feature size of ~50 nm (1/20th of the wavelength) under an inhibition intensity of 11.25 MW cm−2. Upconversion resonance energy transfer may enable next-generation optical data storage with high capacity and low energy consumption, while offering a powerful tool for energy-efficient nanofabrication of flexible electronic devices.


2001 ◽  
Vol 44 (8-9) ◽  
pp. 1791-1795 ◽  
Author(s):  
G Liu ◽  
S.C Wang ◽  
X.F Lou ◽  
J Lu ◽  
K Lu

ChemPhysChem ◽  
2005 ◽  
Vol 6 (1) ◽  
pp. 129-138 ◽  
Author(s):  
Fausto Puntoriero ◽  
Scolastica Serroni ◽  
Maurilio Galletta ◽  
Alberto Juris ◽  
Antonino Licciardello ◽  
...  
Keyword(s):  

1990 ◽  
Vol 193 ◽  
Author(s):  
M. V. R. Murty ◽  
H. S. Lee ◽  
Harry A. Atwater

ABSTRACTSurface and near-surface processes have been studied during low energy Xe ion bombardment of Si (001) and fcc surfaces using molecular dynamics simulations. Defect production is enhanced near the surface of smooth Si (001) surfaces with respect to the bulk in the energy range 20–150 eV, but is not confined exclusively to the surface layer. The extent and qualitative nature of bombardment-induced dissociation of small fcc islands on an otherwise smooth fcc (001) surface is found to depend strongly on island cohesive energy.


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