On Grain Boundary Dislocation Contrast in the Electron Microscope

Author(s):  
R. W. Balluffi ◽  
G. R. Woolhouse ◽  
Y. Komem
1972 ◽  
Vol 31 ◽  
pp. 68-103 ◽  
Author(s):  
R.W. Balluffi ◽  
Y. Komem ◽  
T. Schober

1987 ◽  
Vol 106 ◽  
Author(s):  
Anita Garg ◽  
W. A. T. Clark ◽  
J. P. Hirth

ABSTRACTSilicon bicrystals containing Σ =3(60°/[111]1,2) twin boundaries have been fabricated by sintering together single crystal (IMi) :vafers (which deviated from the exact (111) by upto ±4′). Transmission electron microscopic investigation revealed the boundaries to be near-twin boundaries having a superposed tilt component. The grain boundary dislocation structure of these boundaries has been studied in a transmission electron microscope (TEM) and interpreted as arising from the interaction of a large tilt component with a smaller twist component, to give the observed low energy configuration.


Author(s):  
P. Humble

There has been sustained interest over the last few years into both the intrinsic (primary and secondary) structure of grain boundaries and the extrinsic structure e.g. the interaction of matrix dislocations with the boundary. Most of the investigations carried out by electron microscopy have involved only the use of information contained in the transmitted image (bright field, dark field, weak beam etc.). Whilst these imaging modes are appropriate to the cases of relatively coarse intrinsic or extrinsic grain boundary dislocation structures, it is apparent that in principle (and indeed in practice, e.g. (1)-(3)) the diffraction patterns from the boundary can give extra independent information about the fine scale periodic intrinsic structure of the boundary.In this paper I shall describe one investigation into each type of structure using the appropriate method of obtaining the necessary information which has been carried out recently at Tribophysics.


1975 ◽  
Vol 36 (C4) ◽  
pp. C4-17-C4-22 ◽  
Author(s):  
R. W. BALLUFFI ◽  
P. J. GOODHEW ◽  
T. Y. TAN ◽  
W. R. WAGNER

2004 ◽  
Vol 95 (4) ◽  
pp. 223-225 ◽  
Author(s):  
J. P. Couzinié ◽  
B. Décamps ◽  
L. Priester

1989 ◽  
Vol 164 ◽  
Author(s):  
S. Wagner ◽  
S.H. Wolff ◽  
J.M. Gibson

AbstractWe report and interpret two groups of experiments on the role that hydrogen plays in the formation of silicon microcrystals. We show that the growth of singlecrystal Si by molecular beam epitaxy at 475°C is disrupted by H2, which induces the formation of microcrystals. In crystallization experiments of non-hydrogenated a-Si and of hydrogenated a-Si:H on a hot stage in a transmission electron microscope, hydrogen facilitates the nucleation of crystallites. We explain our observations with a substantial reduction of the grain boundary energy by hydrogen.


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