Geometrical Issues in Design for Binder Jetting – The Effect of Anisotropic Dimensional Change on Sintering

2021 ◽  
pp. 410-421
Author(s):  
Marco Zago ◽  
Nora Francesca Maria Lecis ◽  
Maurizio Vedani ◽  
Ilaria Cristofolini
2018 ◽  
Vol 2018 (1) ◽  
pp. 162-165
Author(s):  
Shin Mizutani ◽  
Daichi Yamaguchi ◽  
Takeshi Fujiwara ◽  
Masato Yasumoto ◽  
Ryunosuke Kuroda
Keyword(s):  
X Ray ◽  

Author(s):  
Sandip Tiwari

This chapter brings together the physical underpinnings of field-effect transistors operating in their nanoscale limits. It tackles the change in dominant behavior from scattering-limited long-channel transport to mesoscopic and few scattering events limits in quantized channels. It looks at electrostatics and a transistor’s controllability as dimensions are shrunk—the interplay of geometry and control—and then brings out the operational characteristics in “off”-state, e.g., the detailed nature of insulator’s implications or threshold voltage’s statistical variations grounded in short-range and long-range effects, and “on”-state, where quantization, quantized channels, ballistic transport and limited scattering are important. It also explores the physical behavior for zero bandgap and monoatomic layer materials by focusing on real-space and reciprocal-space funneling as one of the important dimensional change consequences through a discussion of parasitic resistances.


Wear ◽  
2021 ◽  
pp. 203788
Author(s):  
Shaogang Cui ◽  
Shenglu Lu ◽  
Kiet Tieu ◽  
Ganesh Kumar Meenashisundaram ◽  
Long Wang ◽  
...  

2021 ◽  
Vol 43 ◽  
pp. 102007
Author(s):  
Marco Zago ◽  
Nora Francesca Maria Lecis ◽  
Maurizio Vedani ◽  
Ilaria Cristofolini
Keyword(s):  

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