Nanoscale transistors

2017 ◽  
Author(s):  
Sandip Tiwari
Keyword(s):  
Field Effect Transistors ◽  
Ballistic Transport ◽  
Dimensional Change ◽  
Real Space ◽  
Operational Characteristics ◽  
Statistical Variations ◽  
Channel Transport ◽  
And Control ◽  
Long Channel ◽  
Detailed Nature

This chapter brings together the physical underpinnings of field-effect transistors operating in their nanoscale limits. It tackles the change in dominant behavior from scattering-limited long-channel transport to mesoscopic and few scattering events limits in quantized channels. It looks at electrostatics and a transistor’s controllability as dimensions are shrunk—the interplay of geometry and control—and then brings out the operational characteristics in “off”-state, e.g., the detailed nature of insulator’s implications or threshold voltage’s statistical variations grounded in short-range and long-range effects, and “on”-state, where quantization, quantized channels, ballistic transport and limited scattering are important. It also explores the physical behavior for zero bandgap and monoatomic layer materials by focusing on real-space and reciprocal-space funneling as one of the important dimensional change consequences through a discussion of parasitic resistances.

HIEQ LAB: A NOVEL FULL-SCALE FACILITY WITH OCCUPANTS TO INVESTIGATE INTEGRATIVE LIGHTING AND HUMAN PERFORMANCE IN A MULTI-DOMAIN APPROACH

2021 ◽  
Author(s):  
L. Giovannini ◽  
V.R.M. Lo Verso ◽  
F. Favoino ◽  
V. Serra ◽  
A. Pellegrino
Keyword(s):  
Human Performance ◽  
Well Being ◽  
Energy Performance ◽  
Real Space ◽  
Indoor Environmental Quality ◽  
Design Strategies ◽  
Main Research ◽  
Building Components ◽  
Lighting Systems ◽  
And Control

The new HIEQ Lab (Health, well-being and Indoor Environmental Quality Laboratory) is presented. It is a living lab, primarily intended for research on human performance, comfort, and well-being, integrated with the energy performance in a completely controlled real space. Users are involved as active players in controlling and assessing building components and design strategies for health, well-being and IEQ requirements. Experimental activities will be addressed through a multi-domain approach that combines lighting, acoustic, air quality and thermal issues. For what concerns lighting, the laboratory is conceived to study the performance of daylighting and electric lighting systems and control solutions, focusing on the relationship between lighting conditions and human performance, comfort, and well-being. The paper reports the results of a literature review on existing lighting research facilities, and then describes the features of the new HIEQ Lab and its main research objectives, with a focus on lighting and daylighting research opportunities.

Biochemical Analysis of Hepatic Lipid in Alcoholic and Diabetic and Control Subjects

1983 ◽  
Vol 65 (6) ◽  
pp. 645-652 ◽  
Author(s):  
S. R. Cairns ◽  
T. J. Peters
Keyword(s):  
Free Cholesterol ◽  
Biochemical Analysis ◽  
Essential Fatty Acids ◽  
Liver Lipid ◽  
Alcoholic Cirrhosis ◽  
Diabetic Patients ◽  
Hepatic Lipid ◽  
And Control ◽  
Detailed Nature

1. Percutaneous needle biopsy specimens of liver were obtained from alcoholic, diabetic and control patients. Micro-methods of lipid separation and quantification were employed to determine the detailed nature of hepatic lipid. 2. Triglyceride is the major accumulating liver lipid in both alcoholic and diabetic patients. Cholesteryl ester levels were raised in both alcoholic and diabetic patients but only diabetic patients had significantly increased free cholesterol and phospholipid levels. Determination of phospholipid/free cholesterol ratios revealed a significant decrease in alcoholic cirrhosis compared with controls. 3. Fatty acid ester analysis of hepatic phospholipid and triglyceride revealed significant differences between alcoholic patients and controls but not between diabetic patients and controls. An increased ratio of non-essential/essential fatty acids was found in the patients with alcoholic liver disease whereas those of diabetic patients were similar to the controls.

Comparative Performance Analysis of Nanowire and Nanotube Field Effect Transistors

2021 ◽  
pp. 54-70
Author(s):  
Raj Kumar ◽  
Shashi Bala ◽  
Arvind Kumar
Keyword(s):  
Performance Analysis ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Ballistic Transport ◽  
High Mobility ◽  
Short Channel Effects ◽  
Short Channel ◽  
Comparative Performance ◽  
Channel Effects ◽  
And Performance

To have enhanced drive current and diminish short channel effects, planer MOS transistors have migrated from single-gate devices to three-dimensional multi-gate MOSFETs. The gate-all-around nanowire field-effect transistor (GAA NWFET) and nanotube or double gate-all-around field-effect transistors (DGGA-NTFET) have been proposed to deal with short channel effects and performance relates issues. Nanowire and nanotube-based field-effect transistors can be considered as leading candidates for nanoscale devices due to their superior electrostatic controllability, and ballistic transport properties. In this work, the performance of GAA NWFETs and DGAA-NT FETs will be analyzed and compared. III-V semiconductor materials as a channel will also be employed due to their high mobility over silicon. Performance analysis of junctionless nanowire and nanotube FETs will also be compared and presented.

AN EFFICIENT NUMERICAL METHOD OF DC MODELING FOR POWER MOSFET, MESFET AND AlGaN/GaN HEMT

2008 ◽  
Vol 18 (04) ◽  
pp. 825-840
Author(s):  
TOUHIDUR RAHMAN ◽  
MOHAMMAD A. HUQUE ◽  
SYED K. ISLAM
Keyword(s):  
Entire Range ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Computational Cost ◽  
Model Parameters ◽  
Lagrange Polynomial ◽  
Gan Hemt ◽  
Long Channel ◽  
Device Operation ◽  
Dc Modeling

In this paper, an efficient numerical model applicable for wide varieties of long channel field-effect transistors (MOSFET, MESFET, HEMT, etc.) is developed. A set of available data is used to calculate the model parameters and another set of data is used to verify the accuracy of the model. This model provides a single expression that is applicable for the entire range of device biasing and can predict the output parameters with less than 1% error compared to the experimental results. Lagrange polynomial, the highest degree of polynomial for any given set of data, is used to derive the model from available data. This method is efficient in the sense that it can be derived from a limited number of experimental data and since it uses only one equation for entire range of the device operation hence its computational cost is also small.

Fracture mechanics in design and service: ‘living with defects’ - Statistical aspects of design: risk assessment and structural integrity

1981 ◽  
Vol 299 (1446) ◽  
pp. 111-130 ◽  
Keyword(s):  
Fracture Mechanics ◽  
Structural Reliability ◽  
Structural Integrity ◽  
Product Liability ◽  
Probabilistic Methods ◽  
Statistical Variations ◽  
Engineering Designs ◽  
Recent Developments ◽  
Quantitative Basis ◽  
And Control

Statistical variations in input parameters that affect structural reliability have historically been incorporated approximately in engineering designs by application of safety factors. Increased concerns over the injury potential and costs of licensing, insurance, field repairs or recalls, and product liability claims now demand more quantitative evaluation of possible flaws or unusual usage conditions that might result from statistical variations or uncertainties. This paper describes the basic concepts of probabilistic fracture mechanics that are used to assess and control risk. Recent developments in combined analysis methods are presented that utilize field experience data with probabilistic analysis to improve the accuracy of the structural integrity predictions. Several specific examples are described that illustrate how these probabilistic methods are used to assess risk and to provide a quantitative basis for establishing design, operation or maintenance allowables. These procedures, which realistically model the actual statistical variations that exist, can eliminate unnecessarily conservative approximations and often achieve improved reliability at reduced cost.

Ballistic transport simulation of acceptor–donor C3N/C3B double-wall hetero-nanotube field effect transistors

2019 ◽  
Vol 21 (35) ◽  
pp. 19567-19574 ◽  
Author(s):  
Jianwei Zhao ◽  
Na Cheng ◽  
Yuanyuan He
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Ballistic Transport ◽  
Channel Structure ◽  
Potential Candidate ◽  
Next Generation ◽  
One Dimensional ◽  
Transport Simulation ◽  
The One ◽  
Double Wall

The one-dimensional (1D) acceptor–donor (A–D) hetero-nanotube (HNT) has attracted much attention as a potential candidate for a channel structure of next-generation field effect transistors (FETs).

ON THE DRAIN CURRENT SATURATION IN CARBON NANOTUBE FIELD EFFECT TRANSISTORS

NANO ◽  
2010 ◽  
Vol 05 (03) ◽  
pp. 161-165 ◽  
Author(s):  
A. BENFDILA ◽  
S. ABBAS ◽  
R. IZQUIERDO ◽  
R. TALMAT ◽  
A. VASEASHTA
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Electronic Devices ◽  
Ballistic Transport ◽  
Drain Current ◽  
Functional Behavior ◽  
Current Saturation ◽  
Current Voltage ◽  
Saturation Region ◽  
Current Voltage Characteristics

Electronic devices based on carbon nanotubes (CNTs) show potential for circuit miniaturization due to their superior electrical characteristics and reduced dimensionality. The CNT field effect transistors (CNFETs) offer breakthrough in miniaturization of various electronic circuits. Investigation of ballistic transport governing the operation of CNFETs is essential for understanding the device's functional behavior. This investigation is focused on a study of current–voltage characteristics of device behavior in hard saturation region. The investigation utilizes a set of current–voltage characteristics obtained on typical devices. This work is an extension of our earlier work describing application of our approach to Si -MOSFET behavior in the saturation region.

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