Bayesian Prediction of SMART Power Semiconductor Lifetime with Bayesian Networks

2013 ◽  
pp. 109-112
Author(s):  
Kathrin Plankensteiner ◽  
Olivia Bluder ◽  
Jürgen Pilz
Keyword(s):  
Bayesian Networks ◽  
Bayesian Prediction ◽  
Smart Power ◽  
Power Semiconductor

Bayesian Network Model with Application to Smart Power Semiconductor Lifetime Data

Risk Analysis ◽  
2015 ◽  
Vol 35 (9) ◽  
pp. 1623-1639
Author(s):  
Kathrin Plankensteiner ◽  
Olivia Bluder ◽  
Jürgen Pilz
Keyword(s):  
Bayesian Network ◽  
Network Model ◽  
Lifetime Data ◽  
Bayesian Network Model ◽  
Smart Power ◽  
Power Semiconductor

Electro-Thermal Design of Smart Power Devices and Integrated Circuits

2014 ◽  
Vol 918 ◽  
pp. 191-194 ◽  
Author(s):  
Konstantin O. Petrosyants ◽  
Igor A. Kharitonov ◽  
Nikita I. Ryabov
Keyword(s):  
Integrated Circuits ◽  
High Power ◽  
Temperature Sensors ◽  
Thermal Design ◽  
Analysis Tool ◽  
Power Devices ◽  
Smart Power ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Combined Use

An efficient methodology of electro-thermal design of smart power semiconductor devices and ICs, based on the combined use of SPICE circuit analysis tool and software tools for 2D/3D thermal simulation of IC chip construction, is presented. The features of low, medium and high power elements, temperature sensors, IC chips simulation are considered.

A Study on 400V Sized Trench Power Semiconductor for Smart Power ICs

2013 ◽  
Vol 712-715 ◽  
pp. 1771-1774
Author(s):  
Ey Goo Kang
Keyword(s):  
High Speed ◽  
High Efficiency ◽  
High Reliability ◽  
Low Noise ◽  
Noise Power ◽  
Smart Power ◽  
Large Power ◽  
Power Mosfet ◽  
Power Semiconductor ◽  
Fast Switching

Power MOSFET is develop in power savings, high efficiency, small size, high reliability, fast switching, low noise. Power MOSFET can be used high-speed switching transistors devices. Recently attention to the motor and the application of various technologies. Power MOSFET is devices the voltage-driven approach switching devices are design to handle on large power, power supplies, converters, motor controllers. In this paper, design the 400 V Planar type, and design the trench type for realization of low on-resistance. Trench Power MOSFET Vth : 3.25 V BV : 484 V Ron : 0.0395 Ohm has been optimized.

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