A Study on 400V Sized Trench Power Semiconductor for Smart Power ICs
2013 ◽
Vol 712-715
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pp. 1771-1774
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Power MOSFET is develop in power savings, high efficiency, small size, high reliability, fast switching, low noise. Power MOSFET can be used high-speed switching transistors devices. Recently attention to the motor and the application of various technologies. Power MOSFET is devices the voltage-driven approach switching devices are design to handle on large power, power supplies, converters, motor controllers. In this paper, design the 400 V Planar type, and design the trench type for realization of low on-resistance. Trench Power MOSFET Vth : 3.25 V BV : 484 V Ron : 0.0395 Ohm has been optimized.
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2010 ◽
Vol 75
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pp. 65-73
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2012 ◽
Vol 241-244
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pp. 789-792
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