Doping Concentration Dependence of Pinch-Off Effect in Inhomogeneous Schottky Diodes

2014 ◽  
pp. 243-246
Author(s):  
Subhash Chand ◽  
Priyanka Kaushal
Keyword(s):  
Concentration Dependence ◽  
Doping Concentration ◽  
Schottky Diodes

Diffusion Length in n-Doped 4H Silicon Carbide Crystals Detected by Alpha Particle Probe

2009 ◽  
Vol 615-617 ◽  
pp. 857-860
Author(s):  
Donatella Puglisi ◽  
Gaetano Foti ◽  
Giuseppe Bertuccio
Keyword(s):  
Silicon Carbide ◽  
Doping Concentration ◽  
Diffusion Length ◽  
Schottky Diodes ◽  
Radiation Detectors ◽  
Electron Hole ◽  
Active Volume ◽  
Particle Detectors ◽  
Electron Hole Pair ◽  
Nuclear Detectors

The achievement of nuclear detectors in Silicon Carbide imposes severe constraints on the electronic quality and thickness of the material due to the relatively high value of the energy required to generate an electron-hole pair (7.8 eV) in this material compared to the value for Si (3.6 eV). In this work, 4H-SiC charged particle detectors were realised using epitaxial layers of n-type doping as active region. The thickness of the epilayer is always below 80 μm with a net doping concentration in the range of 8 x 1013 to 1016 cm-3. These properties allowed the fabrication of Schottky diodes that operate well as radiation detectors. At low doping concentration, the epilayer is totally depleted at quite low reverse bias (≈ 50 V), thereby obtaining the maximum active volume.

scholarly journals On the doping concentration dependence and dopant selectivity of photogenerated carrier assisted etching of 4H–SiC epilayers

2019 ◽  
Vol 323 ◽  
pp. 134778
Author(s):  
Shojan P. Pavunny ◽  
Rachael L. Myers-Ward ◽  
Kevin M. Daniels ◽  
Wendy Shi ◽  
Karthik Sridhara ◽  
...  
Keyword(s):  
Concentration Dependence ◽  
Doping Concentration ◽  
Photogenerated Carrier

Doping-concentration dependence of a boron-doped p-type Ge layer grown on a Si (100) substrates by using RTCVD

2014 ◽  
Vol 64 (3) ◽  
pp. 443-450
Author(s):  
Yeon-Ho Kil ◽  
Hyeon Deok Yang ◽  
Jong-Han Yang ◽  
Sukill Kang ◽  
Tae Soo Jeong ◽  
...  
Keyword(s):  
Concentration Dependence ◽  
Doping Concentration ◽  
Boron Doped ◽  
P Type

scholarly journals Doping concentration dependence of the photoluminescence spectra of n-type GaAs nanowires

2016 ◽  
Vol 108 (18) ◽  
pp. 182106 ◽  
Author(s):  
Shermin Arab ◽  
Maoqing Yao ◽  
Chongwu Zhou ◽  
P. Daniel Dapkus ◽  
Stephen B. Cronin
Keyword(s):  
Concentration Dependence ◽  
Doping Concentration ◽  
Photoluminescence Spectra ◽  
Gaas Nanowires

scholarly journals Doping concentration dependence of microstructure and magnetic behaviours in Co-doped TiO2 nanorods

2014 ◽  
Vol 9 (1) ◽  
pp. 673 ◽  
Author(s):  
Li-Ting Tseng ◽  
Xi Luo ◽  
Thiam Tan ◽  
Sean Li ◽  
Jiabao Yi
Keyword(s):  
Concentration Dependence ◽  
Doping Concentration ◽  
Tio2 Nanorods ◽  
Doped Tio2 ◽  
Co Doped
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