Substrate Doping Concentration Dependence of Electron Mobility Enhancement in Uniaxial Strained (110)/ nMOSFETs

2014 ◽  
Vol 14 (5) ◽  
pp. 518-524 ◽  
Author(s):  
Wookyung Sun ◽  
Sujin Choi ◽  
Hyungsoon Shin
Keyword(s):  
Concentration Dependence ◽  
Electron Mobility ◽  
Doping Concentration ◽  
Substrate Doping

Research on Characteristics of the Photovoltaic Cells Integrated on Chip

2014 ◽  
Vol 525 ◽  
pp. 287-291
Author(s):  
Li Xian Xiao ◽  
Yong Tai He ◽  
Yue Hong Peng ◽  
Jin Hao Liu
Keyword(s):  
Conversion Efficiency ◽  
Doping Concentration ◽  
Photovoltaic Cells ◽  
Influence Factors ◽  
Device Layer ◽  
Fabrication Technology ◽  
Junction Depth ◽  
On Chip ◽  
Substrate Doping ◽  
Emitter Junction

The influence factors of Photovoltaic (PV) cells characteristics integrated on chip were analyzed based on the fabrication process and the structure of the PV cells and CMOS devices. The results show the substrate doping concentration, the emitter doping concentration, the emitter junction depth and the thickness of device layer directly determine the conversion efficiency, open voltage and the light-generated current of photovoltaic cells. In the emitter doping concentration range of 1×1019/cm3 to 1×1021/cm3 and the substrate doping concentration range of 1.0×1015/cm3 to 1.0×1017/cm3, the Photovoltaic cells have batter conversion characteristics. The PV cells were designed based on the analysis results in PC1D, and the conversion efficiency is 9.43%. The Photovoltaic cells and the CMOS devices have batter fabrication technology compatibility integrated on chip.

scholarly journals On the doping concentration dependence and dopant selectivity of photogenerated carrier assisted etching of 4H–SiC epilayers

2019 ◽  
Vol 323 ◽  
pp. 134778
Author(s):  
Shojan P. Pavunny ◽  
Rachael L. Myers-Ward ◽  
Kevin M. Daniels ◽  
Wendy Shi ◽  
Karthik Sridhara ◽  
...  
Keyword(s):  
Concentration Dependence ◽  
Doping Concentration ◽  
Photogenerated Carrier

Doping-concentration dependence of a boron-doped p-type Ge layer grown on a Si (100) substrates by using RTCVD

2014 ◽  
Vol 64 (3) ◽  
pp. 443-450
Author(s):  
Yeon-Ho Kil ◽  
Hyeon Deok Yang ◽  
Jong-Han Yang ◽  
Sukill Kang ◽  
Tae Soo Jeong ◽  
...  
Keyword(s):  
Concentration Dependence ◽  
Doping Concentration ◽  
Boron Doped ◽  
P Type

scholarly journals Doping concentration dependence of the photoluminescence spectra of n-type GaAs nanowires

2016 ◽  
Vol 108 (18) ◽  
pp. 182106 ◽  
Author(s):  
Shermin Arab ◽  
Maoqing Yao ◽  
Chongwu Zhou ◽  
P. Daniel Dapkus ◽  
Stephen B. Cronin
Keyword(s):  
Concentration Dependence ◽  
Doping Concentration ◽  
Photoluminescence Spectra ◽  
Gaas Nanowires

Electron Mobility Model of Strained Si1-xGex(001)

2011 ◽  
Vol 181-182 ◽  
pp. 378-382
Author(s):  
Hui Yong Hu ◽  
Shuai Lei ◽  
He Ming Zhang ◽  
Rong Xi Xuan ◽  
Bin Shu
Keyword(s):  
Effective Mass ◽  
Density Of States ◽  
Electron Mobility ◽  
Doping Concentration ◽  
Golden Rule ◽  
Mobility Model ◽  
Collision Term ◽  
Strained Si ◽  
Scattering Rate ◽  
Kp Theory

Solving the Schrödinger equation with strain Hamiltonian and combining with KP theory, we obtained the conductivity effective mass and density of states effective mass of strained Si1-xGex(001) in this paper. On the basis of conductivity effective mass and density of states effective mass, considered of Fermi golden rule and Boltzman collision term approximation theory, scattering rate model was established in strained Si1-xGex(001). Based on the conductivity effective mass and scattering rate models we discussed the dependence of electron mobility on stress and doping concentration in strained Si1-xGex(001), it shows that electron mobility decrease with the increasing of stress and doping concentration. This result can provide valuable references to the research of electron mobility of strained Si1-xGexmaterials and the design of devices.

Electron small polarons and their transport in bismuth vanadate: a first principles study

2015 ◽  
Vol 17 (1) ◽  
pp. 256-260 ◽  
Author(s):  
Kyoung E. Kweon ◽  
Gyeong S. Hwang ◽  
Jinhan Kim ◽  
Sungjin Kim ◽  
SeongMin Kim
Keyword(s):  
Concentration Dependence ◽  
Electron Mobility ◽  
First Principles ◽  
Density Functional Calculations ◽  
Density Functional ◽  
Small Polaron ◽  
Polaron Hopping ◽  
Polaron Formation ◽  
Hybrid Density Functional ◽  
Small Polarons

Hybrid density functional calculations demonstrate small polaron formation in electron-doped BiVO4, and predict the polaron hopping barrier to increase with lattice constant and also the possible concentration-dependence of electron mobility.

Sign in / Sign up

Export Citation Format

Share Document