Heusler Alloy Films for Spintronic Devices

2015 ◽  
pp. 219-248 ◽  
Author(s):  
Atsufumi Hirohata ◽  
James Sagar ◽  
Luke R. Fleet ◽  
Stuart S. P. Parkin
Keyword(s):  
Heusler Alloy ◽  
Alloy Films ◽  
Spintronic Devices

Heusler-alloy films for spintronic devices

2013 ◽  
Vol 111 (2) ◽  
pp. 423-430 ◽  
Author(s):  
Atsufumi Hirohata ◽  
James Sagar ◽  
Leonardo Lari ◽  
Luke R. Fleet ◽  
Vlado K. Lazarov
Keyword(s):  
Heusler Alloy ◽  
Alloy Films ◽  
Spintronic Devices

ChemInform Abstract: Heusler-Alloy Films for Spintronic Devices

ChemInform ◽  
2013 ◽  
Vol 44 (43) ◽  
pp. no-no
Author(s):  
Atsufumi Hirohata ◽  
James Sagar ◽  
Leonardo Lari ◽  
Luke R. Fleet ◽  
Vlado K. Lazarov
Keyword(s):  
Heusler Alloy ◽  
Alloy Films ◽  
Spintronic Devices

POLYCRYSTALLINE CO-BASED FULL-HEUSLER-ALLOY FILMS FOR SPINTRONIC DEVICES

SPIN ◽  
2014 ◽  
Vol 04 (04) ◽  
pp. 1440021 ◽  
Author(s):  
A. HIROHATA ◽  
J. SAGAR ◽  
L. R. FLEET ◽  
H. ENDO
Keyword(s):  
Heusler Alloy ◽  
Magnetic Behavior ◽  
Epitaxial Films ◽  
Next Generation ◽  
Alloy Films ◽  
Spintronic Devices ◽  
Low Temperature Annealing ◽  
Order Of Magnitude ◽  
Device Applications ◽  
Full Heusler

For the implementation of Heusler-alloy films into next-generation magnetic memories and storages, the optimization of their polycrystalline nature is critical. In this review, we identify two key parameters for the optimization; grain volume for interfacial magnetism and activation volume for magnetic dynamics. We establish correlations between these structural and magnetic volumes and magnetic behavior and then optimize these properties. The optimized polycrystalline films possess exchange bias of 250 Oe induced by low-temperature annealing (400°C for 30 min.), which is induced by the grain volume matching between the Heusler-alloy and antiferromagnetic layers. Despite the matching size measuring 7–8 nm in diameter, the magnetic activation volumes are estimated to be almost 80 nm which is one order of magnitude greater than that for epitaxial films. These values satisfy the requirements for next-generation spintronic device applications and unambiguously prove the great potential of the polycrystalline Heusler-alloy films for future spintronic applications.

Magnetic properties of Co2MnGa Heusler alloy films with different crystalline order

2007 ◽  
Vol 316 (2) ◽  
pp. e407-e410 ◽  
Author(s):  
V.A. Oksenenko ◽  
V.A. Kulagin ◽  
Y.V. Kudryavtsev ◽  
J. Dubowik ◽  
I. Gościańska ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Heusler Alloy ◽  
Alloy Films ◽  
Crystalline Order

Low damping constant for Co2FeAl Heusler alloy films and its correlation with density of states

2009 ◽  
Vol 105 (7) ◽  
pp. 07D306 ◽  
Author(s):  
S. Mizukami ◽  
D. Watanabe ◽  
M. Oogane ◽  
Y. Ando ◽  
Y. Miura ◽  
...  
Keyword(s):  
Density Of States ◽  
Heusler Alloy ◽  
Alloy Films

scholarly journals Low magnetic damping and large negative anisotropic magnetoresistance in half-metallic Co2−xMn1+xSi Heusler alloy films grown by molecular beam epitaxy

2018 ◽  
Vol 112 (26) ◽  
pp. 262407 ◽  
Author(s):  
Mikihiko Oogane ◽  
Anthony P. McFadden ◽  
Kenji Fukuda ◽  
Masakiyo Tsunoda ◽  
Yasuo Ando ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Heusler Alloy ◽  
Molecular Beam ◽  
Anisotropic Magnetoresistance ◽  
Half Metallic ◽  
Alloy Films ◽  
Magnetic Damping

scholarly journals Local magnetism of Co2MnSn Heusler alloy films and magnetoresistance of Co2MnSn-based magnetic tunnel junctions

2010 ◽  
Vol 200 (6) ◽  
pp. 062012 ◽  
Author(s):  
K Mibu ◽  
D Gondo ◽  
T Hori ◽  
M A Tanaka ◽  
K Kondou ◽  
...  
Keyword(s):  
Heusler Alloy ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Alloy Films

Magnetic and transport properties of Ni–Mn–In Heusler alloy films: the effect of structural disorder

2021 ◽  
Vol 94 (4) ◽  
Author(s):  
Y. V. Kudryavtsev ◽  
A. K. Melnik ◽  
I. Gościańska ◽  
J. Dubowik ◽  
A. F. Kravets
Keyword(s):  
Transport Properties ◽  
Heusler Alloy ◽  
Structural Disorder ◽  
Alloy Films
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