GaN, hexagonal modification: diffusion coefficient, diffusion length

2008 ◽  
pp. 259-260
Author(s):  
B.K. Meyer
Keyword(s):  
Diffusion Coefficient ◽  
Diffusion Length ◽  
Hexagonal Modification

The Contribution of Diffusion Coefficient to the Eutectic Instability and Amorphous Phase Formation

2010 ◽  
Vol 654-656 ◽  
pp. 1355-1358 ◽  
Author(s):  
Nan Wang ◽  
Xiao Wang ◽  
Wen Jing Yao
Keyword(s):  
Diffusion Coefficient ◽  
Amorphous Phase ◽  
Growth Velocity ◽  
Diffusion Length ◽  
Eutectic Growth ◽  
Maximum Growth ◽  
Interface Growth ◽  
Maximum Undercooling ◽  
Experimental Values ◽  
Amorphous Phase Formation

The diffusion coefficient D decides the diffusion length of solute boundary and plays a key role in the microstructure selection. This paper examines quantitatively the contribution of diffusion coefficient to the eutectic instability and amorphorization ability. The maximum growth velocity Vmax and the maximum undercooling Tmax as functions of activation energy Q in strong liquids are deduced theoretically based on eutectic growth model by separating Q from D. It reveals that the larger the Q, the smaller the Tmax and Vmax, which shows the same tendency as experimental values in some Al-based alloys and glass formers. This indicates that it is the sluggish movement of atoms that makes the transition from eutectic to others structural morphologies, even to amorphous phase, occur at smaller interface growth velocity or undercooling, which is the main contribution of the diffusion coefficient to the amorphorization ability.

The effects of heavy atoms on the exciton diffusion properties in photoactive thin films of tetrakis(4-carbomethoxyphenyl)porphyrins

2015 ◽  
Vol 3 (6) ◽  
pp. 1243-1249 ◽  
Author(s):  
Angy L. Ortiz ◽  
Graham S. Collier ◽  
Dawn M. Marin ◽  
Jennifer A. Kassel ◽  
Reynolds J. Ivins ◽  
...  
Keyword(s):  
Thin Films ◽  
Monte Carlo ◽  
Diffusion Coefficient ◽  
Diffusion Length ◽  
Heavy Atoms ◽  
Exciton Diffusion ◽  
Exciton Diffusion Length ◽  
Quenching Efficiency ◽  
Diffusion Properties

The exciton diffusion coefficient (D) and exciton diffusion length (LD) for three tetrakis(4-carbomethoxyphenyl)porphyrins were obtained by fitting the quenching efficiency and PL lifetime to a 3D exciton Monte Carlo ediffusion model.

Rapid Diffusion of Molybdenum Trace Contamination in Silicon

1984 ◽  
Vol 36 ◽  
Author(s):  
S. P. Tobin ◽  
A. C. Greenwald ◽  
R. G. Wolfson ◽  
D. L. Meier ◽  
P. J. Drevinsky
Keyword(s):  
Diffusion Coefficient ◽  
Transition Metals ◽  
Lower Limit ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Deep Level ◽  
Depth Profiling ◽  
Epitaxial Layers ◽  
Epitaxial Silicon ◽  
Rapid Diffusion

ABSTRACTMolybdenum contamination has been detected in silicon epitaxial layers and substrate wafers after processing in any one of several epitaxial silicon reactors. Greatly reduced minority carrier diffusion lengths and lifetimes are consistent with Mo concentrations measured by DLTS in the 1012 and 1013 cm−3 ranges. Depth profiling of diffusion length and the Mo deep level show much greater penetration than expected from previous reports of Mo as a slow diffuser. The data indicate a lower limit of 10−8 cm2/sec for the diffusion coefficient of Mo in silicon at 1200°C, consistent with high diffusivities measured for other transition metals.

scholarly journals Preparation and Characterization of Chitosan Binder-Based Electrode for Dye-Sensitized Solar Cells

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
En Mei Jin ◽  
Kyung-Hee Park ◽  
Ju-Young Park ◽  
Jae-Wook Lee ◽  
Soon-Ho Yim ◽  
...  
Keyword(s):  
Diffusion Coefficient ◽  
Solar Cells ◽  
Transit Time ◽  
Diffusion Length ◽  
Dye Sensitized Solar Cells ◽  
Electron Recombination ◽  
Recombination Lifetime ◽  
Dye Sensitized ◽  
Sensitized Solar Cells ◽  
And Diffusion

A chitosan binder-based TiO2photoelectrode is used in dye-sensitized solar cells (DSSCs). Field-emission scanning electron microscope (FE-SEM) images revealed that the grain size, thickness, and distribution of TiO2films are affected by the chitosan content. With addition of 2.0 wt% chitosan to the TiO2film (D2), the surface pore size became the smallest, and the pores were fairly evenly distributed. The electron transit time, electron recombination lifetime, diffusion coefficient, and diffusion length were analyzed by IMVS and IMPS. The best DSSC, with 2.0 wt% chitosan addition to the TiO2film, had a shorter electron transit time, longer electron recombination lifetime, and larger diffusion coefficient and diffusion length than the other samples. The results of 2.0 wt% chitosan-added TiO2DSSCs are an electron transit time of  s, electron recombination lifetime of  s, diffusion coefficient of  cm2s−1, diffusion length of 14.81 μm, and a solar conversion efficiency of 4.18%.

Temperature dependent carrier lifetime, diffusion coefficient, and diffusion length in Ge0.95Sn0.05 epilayer

2020 ◽  
Vol 128 (11) ◽  
pp. 115103
Author(s):  
Patrik Ščajev ◽  
Vaiva Soriūtė ◽  
Gediminas Kreiza ◽  
Tadas Malinauskas ◽  
Sandra Stanionytė ◽  
...  
Keyword(s):  
Diffusion Coefficient ◽  
Carrier Lifetime ◽  
Diffusion Length ◽  
Temperature Dependent ◽  
And Diffusion

A carrier density dependent diffusion coefficient, recombination rate and diffusion length in MAPbI3 and MAPbBr3 crystals measured under one- and two-photon excitations

2020 ◽  
Vol 8 (30) ◽  
pp. 10290-10301 ◽  
Author(s):  
Patrik Ščajev ◽  
Saulius Miasojedovas ◽  
Saulius Juršėnas
Keyword(s):  
Diffusion Coefficient ◽  
Recombination Rate ◽  
Carrier Density ◽  
Diffusion Length ◽  
Density Range ◽  
Density Dependent ◽  
Two Photon ◽  
Diffusion Rates ◽  
And Diffusion ◽  
Photon Excitations

Recombination, diffusion rates and diffusion length in MAPbI3 and MAPBr3 crystals in a wide carrier density range: experiment and theory.

Calculation of radon diffusion coefficient and diffusion length for different building construction materials

2009 ◽  
Vol 83 (8) ◽  
pp. 1171-1175 ◽  
Author(s):  
A. K. Narula ◽  
S. K. Goyal ◽  
Savita Saini ◽  
R. P. Chauhan ◽  
S. K. Chakarvarti
Keyword(s):  
Diffusion Coefficient ◽  
Diffusion Length ◽  
Construction Materials ◽  
Building Construction ◽  
Radon Diffusion ◽  
And Diffusion

Rate limiting interfacial hole transfer in Sb2S3 solid-state solar cells

2014 ◽  
Vol 7 (3) ◽  
pp. 1148-1158 ◽  
Author(s):  
Jeffrey A. Christians ◽  
David T. Leighton ◽  
Prashant V. Kamat
Keyword(s):  
Diffusion Coefficient ◽  
Solar Cells ◽  
Solid State ◽  
Diffusion Length ◽  
Hole Transfer ◽  
Rate Limiting ◽  
And Diffusion

The hole diffusion coefficient and diffusion length in Sb2S3 is measured. Hole transfer from Sb2S3 to CuSCN is found to be predominately limited by transfer across the Sb2S3–CuSCN interface.

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