Diffusion Coefficients of Metallic Melts Measured by Shear Cell Technique Under Microgravity and on the Ground

2009 ◽  
pp. 61-84 ◽  
Author(s):  
Shinsuke Suzuki
Keyword(s):  
Diffusion Coefficients ◽  
Shear Cell ◽  
Metallic Melts

Measurement of diffusion coefficients of Au in liquid Ag with the shear cell technique

2007 ◽  
Vol 353 (32-40) ◽  
pp. 3290-3294 ◽  
Author(s):  
Tadahiko Masaki ◽  
Tomoharu Fukazawa ◽  
Yuki Watanabe ◽  
Minoru Kaneko ◽  
Shinichi Yoda ◽  
...  
Keyword(s):  
Diffusion Coefficients ◽  
Shear Cell

Measurements of diffusion coefficients of metallic melt under microgravity—current status of the development of shear cell technique towards JEM on ISS

2005 ◽  
Vol 16 (2) ◽  
pp. 327-335 ◽  
Author(s):  
Tadahiko Masaki ◽  
Tomoharu Fukazawa ◽  
Satoshi Matsumoto ◽  
Toshio Itami ◽  
Shinichi Yoda
Keyword(s):  
Diffusion Coefficients ◽  
Current Status ◽  
Shear Cell ◽  
Metallic Melt

Interlayer mixing in GaAs/AlxGa1-xAs heterostructures as a result of Se+ ion implantation

1988 ◽  
Vol 46 ◽  
pp. 908-909
Author(s):  
E.G. Bithell ◽  
W.M. Stobbs
Keyword(s):  
Ion Implantation ◽  
Diffusion Coefficients ◽  
Dark Field ◽  
Atomic Mass ◽  
Composition Profile ◽  
Semiconductor Heterostructures ◽  
Transmission Electron ◽  
Microscope Images ◽  
Damage Process ◽  
Electron Energy Loss

It is well known that the microstructural consequences of the ion implantation of semiconductor heterostructures can be severe: amorphisation of the damaged region is possible, and layer intermixing can result both from the original damage process and from the enhancement of the diffusion coefficients for the constituents of the original composition profile. A very large number of variables are involved (the atomic mass of the target, the mass and energy of the implant species, the flux and the total dose, the substrate temperature etc.) so that experimental data are needed despite the existence of relatively well developed models for the implantation process. A major difficulty is that conventional techniques (e.g. electron energy loss spectroscopy) have inadequate resolution for the quantification of any changes in the composition profile of fine scale multilayers. However we have demonstrated that the measurement of 002 dark field intensities in transmission electron microscope images of GaAs / AlxGa1_xAs heterostructures can allow the measurement of the local Al / Ga ratio.

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