Drift-Diffusion Equations

Author(s):  
Ansgar Jüngel
2005 ◽  
Vol 15 (08) ◽  
pp. 1253-1272 ◽  
Author(s):  
L. L. BONILLA ◽  
R. ESCOBEDO

A Wigner–Poisson kinetic equation describing charge transport in doped semiconductor superlattices is proposed. Electrons are assumed to occupy the lowest miniband, exchange of lateral momentum is ignored and the electron–electron interaction is treated in the Hartree approximation. There are elastic collisions with impurities and inelastic collisions with phonons, imperfections, etc. The latter are described by a modified BGK (Bhatnagar–Gross–Krook) collision model that allows for energy dissipation while yielding charge continuity. In the hyperbolic limit, nonlocal drift-diffusion equations are derived systematically from the kinetic Wigner–Poisson–BGK system by means of the Chapman–Enskog method. The nonlocality of the original quantum kinetic model equations implies that the derived drift-diffusion equations contain spatial averages over one or more superlattice periods. Numerical solutions of the latter equations show self-sustained oscillations of the current through a voltage biased superlattice, in agreement with known experiments.


2020 ◽  
Vol 22 (1) ◽  
pp. 245-251 ◽  
Author(s):  
Tianyang Chen ◽  
Zhe Sun ◽  
Mao Liang ◽  
Song Xue

A generalized charge exchange model is introduced into drift–diffusion equations for modeling the charge extraction in perovskite solar cells.


1995 ◽  
Vol 05 (04) ◽  
pp. 429-455 ◽  
Author(s):  
A. YAMNAHAKKI

By an asymptotic analysis of the Boltzmann equation of semiconductors, we prove that Robin boundary conditions for drift-diffusion equations provide a more accurate fluid model than Dirichlet conditions. The Robin conditions involve the concept of the extrapolation length which we compute numerically. We compare the two-fluid models for a test problem. The numerical results show that the current density is correctly computed with Robin conditions. This is not the case with Dirichlet conditions.


1997 ◽  
Vol 07 (01) ◽  
pp. 61-80 ◽  
Author(s):  
Ph. Montarnal ◽  
B. Perthame

We study the asymptotic behavior of the semiconductor drift-diffusion (DD) equations with a vanishing diffusion term. In order to obtain a closed limit problem, we need to introduce two new variables involving the logarithm of the electronic concentration. We show that the limit problem is a coupled system of Hamilton–Jacobi equations and variational inequalities. In the mono-dimensional case, we show that this limit problem has a unique solution, which allows us to prove the convergence of the DD model for vanishing viscosities. Our method, which is an extension of previous asymptotic studies, sheds new light on the convergence of the electronic concentration, improves some necessary mathematical hypotheses and provides an original approach to the problem, well suited for numerical purposes.


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