New Frontiers of Electronic and Optoelectronic Device Physics and Technology

2010 ◽  
pp. 333-342
Author(s):  
Fausto Rossi
Keyword(s):  
Optoelectronic Device ◽  
Device Physics

Optoelectronic Device Physics Based on Conjugated Polymers

1992 ◽  
Vol 216 (1) ◽  
pp. 33-38 ◽  
Author(s):  
Richard H. Friend ◽  
Donal D. C. Bradley ◽  
Adam R. Brown ◽  
Stephen C. Graham ◽  
David A. Halliday ◽  
...  
Keyword(s):  
Conjugated Polymers ◽  
Optoelectronic Device ◽  
Device Physics

scholarly journals Pitfalls of simulation-based machine learning in optoelectronic device design

2020 ◽  
Author(s):  
Joachim Piprek
Keyword(s):  
Machine Learning ◽  
Design Optimization ◽  
Light Emitting Diode ◽  
Optoelectronic Device ◽  
Point Of View ◽  
Device Physics ◽  
Learning Approaches ◽  
Device Design ◽  
Light Emitting ◽  
Simulation Based

Focusing on GaN-based light-emitting diode (LED) design optimization, this paper evaluates simulation-based machine learning approaches from a device physics point of view. Strategies are suggested for achieving more realistic results.

scholarly journals Pitfalls of simulation-based machine learning in optoelectronic device design

2020 ◽  
Author(s):  
Joachim Piprek
Keyword(s):  
Machine Learning ◽  
Design Optimization ◽  
Light Emitting Diode ◽  
Optoelectronic Device ◽  
Point Of View ◽  
Device Physics ◽  
Learning Approaches ◽  
Device Design ◽  
Light Emitting ◽  
Simulation Based

Focusing on GaN-based light-emitting diode (LED) design optimization, this paper evaluates simulation-based machine learning approaches from a device physics point of view. Strategies are suggested for achieving more realistic results.

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

Carbon Nanotube and Graphene Device Physics

2009 ◽  
Author(s):  
H.-S. Philip Wong ◽  
Deji Akinwande
Keyword(s):  
Carbon Nanotube ◽  
Device Physics

Photonic Silicon Device Physics.

1995 ◽  
Author(s):  
S. D. Russell ◽  
W. B. Dubbelday ◽  
R. L. Shimabukuro ◽  
P. R. De La Houssaye
Keyword(s):  
Device Physics ◽  
Silicon Device

In(Ga)N Nanowire Heterostructures and Optoelectronic Device Applications

2011 ◽  
Vol 1 (2) ◽  
pp. 123-139
Author(s):  
Saeed Fathololoumi ◽  
Hieu P. T. Nguyen ◽  
Zetian Mi
Keyword(s):  
Optoelectronic Device ◽  
Nanowire Heterostructures ◽  
Device Applications

In(Ga)N Nanowire Heterostructures and Optoelectronic Device Applications

2011 ◽  
Vol 1 (2) ◽  
pp. 123-139 ◽  
Author(s):  
Saeed Fathololoumi ◽  
Hieu P. T. Nguyen ◽  
Zetian Mi
Keyword(s):  
Optoelectronic Device ◽  
Nanowire Heterostructures ◽  
Device Applications

ε-InSe single crystals grown by a horizontal gradient freeze method

CrystEngComm ◽  
2020 ◽  
Vol 22 (45) ◽  
pp. 7864-7869
Author(s):  
Maojun Sun ◽  
Wei Wang ◽  
Qinghua Zhao ◽  
Xuetao Gan ◽  
Yuanhui Sun ◽  
...  
Keyword(s):  
Single Crystals ◽  
Optoelectronic Device ◽  
Indium Selenide ◽  
Horizontal Gradient ◽  
Device Applications

Indium selenide (InSe) single crystals have been considered as promising candidates for future optical, electrical, and optoelectronic device applications.

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