TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

Introduction Of Ions Into Wide Band Gap Semiconductors

1997 ◽  
Vol 483 ◽  
Author(s):  
H. Paul Maruska ◽  
Mike Lioubtchenko ◽  
Thomas G. Tetreault ◽  
Marek Osinskif ◽  
Stephen J. Pearton ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Band Gap ◽  
Elevated Temperatures ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
New Device ◽  
Device Applications ◽  
Wide Band Gap Semiconductors ◽  
Junction Diode

AbstractWith great attention now being given to the wide band gap materials for electronic and optoelectronic device applications, there is interest in using ion implantation to introduce dopants into selected regions of devices. Work on ion implantation into SiC and the III-V nitrides is reviewed, new device concepts are given, and recent results are presented. These include SiC implantations at elevated temperatures, a GaN sample implanted with Si having an electron mobility after annealing of 106 cm2/V-s, and a novel GaN np junction diode created by implantation.

Wide band gap of Strontium doped Hafnium oxide nanoparticles for opto-electronic device applications – Synthesis and characterization

2017 ◽  
Vol 186 ◽  
pp. 42-44 ◽  
Author(s):  
J. Manikantan ◽  
H.B. Ramalingam ◽  
B. Chandar Shekar ◽  
B. Murugan ◽  
R. Ranjith Kumar ◽  
...  
Keyword(s):  
Band Gap ◽  
Hafnium Oxide ◽  
Electronic Device ◽  
Wide Band ◽  
Synthesis And Characterization ◽  
Oxide Nanoparticles ◽  
Wide Band Gap ◽  
Device Applications

Fabrication of wide band-gap CuGaSe2 solar cells for tandem device applications by sputtering from a ternary target and post selenization treatment

2018 ◽  
Vol 230 ◽  
pp. 128-131 ◽  
Author(s):  
Yaowei Wei ◽  
Daming Zhuang ◽  
Ming Zhao ◽  
Ning Zhang ◽  
Xinping Yu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Device Applications

Crystal Growth of Tl4CdI6: A Wide Band Gap Semiconductor for Hard Radiation Detection

2014 ◽  
Vol 14 (5) ◽  
pp. 2401-2410 ◽  
Author(s):  
Shichao Wang ◽  
Zhifu Liu ◽  
John A. Peters ◽  
Maria Sebastian ◽  
Sandy L. Nguyen ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Radiation Detection ◽  
Wide Band ◽  
Wide Band Gap ◽  
Hard Radiation

scholarly journals Electrical Challenges of Heteroepitaxial 3C-Sic on Silicon

2018 ◽  
Vol 924 ◽  
pp. 297-301
Author(s):  
Aiswarya Pradeepkumar ◽  
D. Kurt Gaskill ◽  
Francesca Iacopi
Keyword(s):  
Band Gap ◽  
Semiconductor Device ◽  
Wide Band ◽  
Silicon Substrates ◽  
Wide Band Gap ◽  
Device Applications ◽  
Electronic Performance ◽  
Cubic Silicon Carbide ◽  
The Impact ◽  
Sic Films

Epitaxial cubic silicon carbide films on silicon have attracted extensive interest for semiconductor device applications such as high-voltage, high-frequency diodes, and hetero-junction bi-polar transistors [1]. This is because they can offer access to the properties of the SiC material such as its wide band gap and high thermal conductivity on the more conventional silicon substrates [2]. Rahimi et al. have shown, however, that the substantial tensile strain generated from the lattice and thermal expansion coefficient mismatch between 3C-SiC and silicon, may reduce the band gap in the SiC epitaxial films [3]. Nevertheless, the impact of this phenomenon on the electrical and electronic performance of the epitaxial SiC films on silicon has not been fully elucidated to date; such information is vital to obtain the optimal performance of devices fabricated from these strained heterojunctions.

scholarly journals Annealing Induced Dissipation of Residual Trapped Charge in Focused Ion Beam Processed Wide Band Gap Materials for Device Applications.

2006 ◽  
Vol 12 (S02) ◽  
pp. 1326-1327
Author(s):  
MA Stevens-Kalceff ◽  
P Gowlett
Keyword(s):  
Band Gap ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Wide Band ◽  
Wide Band Gap ◽  
Device Applications ◽  
Trapped Charge

Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2005

Wide Band-Gap Kesterite Thin Films for Photovoltaic Applications

2018 ◽  
Author(s):  
Raquel Caballero ◽  
Leonor de la Cueva ◽  
Andrea Ruiz-Perona ◽  
Yudenia Sánchez ◽  
Markus Neuschitzer ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Photovoltaic Applications
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