Tetradymite-Type Tellurides and Related Compounds: Real-Structure Effects and Thermoelectric Properties

2011 ◽  
pp. 333-340
Author(s):  
Oliver Oeckler
2017 ◽  
Vol 5 (36) ◽  
pp. 19406-19415 ◽  
Author(s):  
Robin Lefèvre ◽  
David Berthebaud ◽  
Oleg Lebedev ◽  
Olivier Pérez ◽  
Célia Castro ◽  
...  

A new ternary layered compound In2Ge2Te6, belonging to the hexatellurogermanate family has been synthesized from the reaction of appropriate amounts of the pure elements at high temperature in sealed silica tubes.


2012 ◽  
Vol 51 (12R) ◽  
pp. 121803 ◽  
Author(s):  
Atsuko Kosuga ◽  
Ryosuke Higashine ◽  
Theerayuth Plirdpring ◽  
Mie Matsuzawa ◽  
Ken Kurosaki ◽  
...  

2011 ◽  
Vol 23 (19) ◽  
pp. 4349-4356 ◽  
Author(s):  
Tobias Rosenthal ◽  
Matthias N. Schneider ◽  
Christian Stiewe ◽  
Markus Döblinger ◽  
Oliver Oeckler

2005 ◽  
Vol 20 (11) ◽  
pp. 3082-3087 ◽  
Author(s):  
M. Shikano ◽  
R. Funahashi ◽  
M. Kitawaki

Agglomerates of aligned crystals of CaxCo2O4 with a layer of CoO2 were grown using a chloride flux technique, and their thermoelectric properties in air were determined. The agglomerates take the form of a very thin flakelike cluster of crystals with a typical size of almost 3 × 2 × 0.07 mm. The values of thermoelectric power along the ab-plane are larger than 200 μV K−1 at temperatures above 873 K and reach almost 300 μV K−1 at 973 K. The temperature dependence of the electrical resistivity along the ab-plane shows bends around 450 and 825 K, and the ln ρab−T−1 curve followed an Arrhenius-type behavior below 450 K. Temperature dependence of thermal conductivity indicated that stacking faults along the c axis induce phonon scattering like that in a misfit-layered structure. The effect of the CoO2 layer on thermoelectric performance is discussed in comparison with related compounds.


2000 ◽  
Vol 15 (12) ◽  
pp. 2789-2793 ◽  
Author(s):  
G. Jeffrey Snyder ◽  
T. Caillat ◽  
J-P. Fleurial

The compounds GexNbTe2 (0.39 ≤ x ≤ 0.53) have been studied for their thermoelectric properties. By changing x, the carrier concentration can be adjusted so that the material changes from a p-type metal to a p-type semiconductor. The maximum germanium concentration at about Ge0.5NbTe2 is also the most semiconducting composition. High- and low-temperature electrical resistivity, Hall effect, Seebeck coefficient, and thermal conductivity were measured. Evidence of electronic ordering was found in some samples. The thermal conductivity is reasonably low and glasslike with room temperature values around 20–25 mW/cm K. However, the power factor is too low to compete with state-of-the-art materials. The maximum thermoelectric figure of merit, ZT found in these compounds is about 0.12. The low ZT can be traced to the low carrier mobility of about 10 cm2 /Vs. The related compounds Si0.5NbTe2 and Ge0.5TaTe2 were also studied.


2009 ◽  
Vol 34 (2) ◽  
pp. 245-248 ◽  
Author(s):  
H. Kawakami ◽  
H. Noda ◽  
M. Sugimoto ◽  
T. Takayama ◽  
H. Yamamura

2012 ◽  
Vol 51 ◽  
pp. 121803 ◽  
Author(s):  
Atsuko Kosuga ◽  
Ryosuke Higashine ◽  
Theerayuth Plirdpring ◽  
Mie Matsuzawa ◽  
Ken Kurosaki ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document