Raman Scattering Measurements of Vibrational Relaxation in Expanding Nitrogen

1995 ◽  
pp. 229-234 ◽  
Author(s):  
W. D. Gillespie ◽  
S. P. Sharma
1993 ◽  
Author(s):  
WALTER GILLESPIE ◽  
DANIEL BERSHADER ◽  
SURENDRA SHARMA ◽  
STEPHEN RUFFIN

1991 ◽  
Vol 220 ◽  
Author(s):  
R. C. Bowman ◽  
P. M. Adams ◽  
S. J. Chang ◽  
V. Arbet-Engels ◽  
K. L. Wang

ABSTRACTInterface mixing between the Ge and Si layers in symmetrically strained SimGem superlattices occurs during post growth thermal anneals. Interdiffusion coefficients were obtained from intensity changes in the low angle superlattice x-ray satellites on samples with nominal periodicities between 1.4nm and 5.6nm. A common activation energy of 3.0±0.1 eV was found. The bulk interdiffusion coefficients for SimGem were derived since measurements were made on samples with different layer thicknesses. Intermixing appears to occur by diffusion of Si atoms into the Ge layers via a vacancy mechanism. Raman scattering measurements support this process as well as the formation of Si1−xGex, alloy layers during the anneals.


2002 ◽  
Vol 41 (15) ◽  
pp. 2962 ◽  
Author(s):  
Yanda Zhang ◽  
Peter B. Kelly ◽  
Ian M. Kennedy

2002 ◽  
Vol 307-310 ◽  
pp. 135-141 ◽  
Author(s):  
S Caponi ◽  
M Ferrari ◽  
A Fontana ◽  
C Masciovecchio ◽  
A Mermet ◽  
...  

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