Raman Scattering Measurements of Mean Values and Fluctuations in Fluid Mechanics

1974 ◽  
pp. 303-310
Author(s):  
Samuel Lederman
Keyword(s):  
Raman Scattering ◽  
Fluid Mechanics ◽  
Mean Values ◽  
Scattering Measurements

Raman scattering measurements of vibrational and rotational distributions in expanding nitrogen

1993 ◽  
Author(s):  
WALTER GILLESPIE ◽  
DANIEL BERSHADER ◽  
SURENDRA SHARMA ◽  
STEPHEN RUFFIN
Keyword(s):  
Raman Scattering ◽  
Scattering Measurements

X-Ray and Raman Studies of Interlayer Mixing in SimGem Superlattices

1991 ◽  
Vol 220 ◽  
Author(s):  
R. C. Bowman ◽  
P. M. Adams ◽  
S. J. Chang ◽  
V. Arbet-Engels ◽  
K. L. Wang
Keyword(s):  
Activation Energy ◽  
Raman Scattering ◽  
Vacancy Mechanism ◽  
Strained Si ◽  
X Ray ◽  
Scattering Measurements ◽  
Intensity Changes ◽  
Interface Mixing ◽  
Interdiffusion Coefficients

ABSTRACTInterface mixing between the Ge and Si layers in symmetrically strained SimGem superlattices occurs during post growth thermal anneals. Interdiffusion coefficients were obtained from intensity changes in the low angle superlattice x-ray satellites on samples with nominal periodicities between 1.4nm and 5.6nm. A common activation energy of 3.0±0.1 eV was found. The bulk interdiffusion coefficients for SimGem were derived since measurements were made on samples with different layer thicknesses. Intermixing appears to occur by diffusion of Si atoms into the Ge layers via a vacancy mechanism. Raman scattering measurements support this process as well as the formation of Si1−xGex, alloy layers during the anneals.

Resonant Raman-scattering measurements of trichloroethene in a thermal boundary layer

2002 ◽  
Vol 41 (15) ◽  
pp. 2962 ◽  
Author(s):  
Yanda Zhang ◽  
Peter B. Kelly ◽  
Ian M. Kennedy
Keyword(s):  
Boundary Layer ◽  
Raman Scattering ◽  
Thermal Boundary Layer ◽  
Scattering Measurements ◽  
Resonant Raman ◽  
Resonant Raman Scattering

X-ray diffraction and Raman scattering measurements on silica xerogels

2002 ◽  
Vol 307-310 ◽  
pp. 135-141 ◽  
Author(s):  
S Caponi ◽  
M Ferrari ◽  
A Fontana ◽  
C Masciovecchio ◽  
A Mermet ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Silica Xerogels ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scattering Measurements

Resonant Raman Scattering of Poly-3-Alkylthiophenes

1989 ◽  
Vol 173 ◽  
Author(s):  
C. Botta ◽  
S. Luzzati ◽  
A. Bolognesi ◽  
M. Catellani ◽  
S. Destri ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Electronic Transition ◽  
Vibrational Frequency ◽  
Strongly Coupled ◽  
Cast Films ◽  
Scattering Measurements ◽  
Solution Cast ◽  
Resonant Raman ◽  
Resonant Raman Scattering

ABSTRACTWe report Raman scattering measurements on poly-3-heptylthiophene and poly-3-undecylthiophenes both on resonance and preresonance conditions. We have studied different samples as solutions ,solution cast films and electrosynthetized as grown films. Our results indicate that the vibrational frequency of the mode which is strongly coupled to the π - π* electronic transition is sensible to “small” torsions between thiophenes rings , which do not necessarly interrupt completely the conjugation path.

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