In Situ X-Ray Reciprocal Space Mapping for Characterization of Nanomaterials

2016 ◽  
pp. 507-544 ◽  
Author(s):  
Peter Siffalovic ◽  
Karol Vegso ◽  
Martin Hodas ◽  
Matej Jergel ◽  
Yuriy Halahovets ◽  
...  
Keyword(s):  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
X Ray

scholarly journals High-temperature (1500 K) reciprocal space mapping on a laboratory X-ray diffractometer

2007 ◽  
Vol 40 (2) ◽  
pp. 332-337 ◽  
Author(s):  
R. Guinebretière ◽  
A. Boulle ◽  
R. Bachelet ◽  
O. Masson ◽  
P. Thomas
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Reciprocal Space ◽  
Primary Beam ◽  
Sample Holder ◽  
Reciprocal Space Mapping ◽  
X Ray ◽  
Translation Stage

A laboratory X-ray diffractometer devoted to thein situcharacterization of the microstructure of epitaxic thin films at temperatures up to 1500 K has been developed. The sample holder was built using refractory materials, and a high-accuracy translation stage allows correction of the dilatation of both the sample and the sample holder. The samples are oriented with respect to the primary beam with two orthogonal rotations allowing the registration of symmetric as well as asymmetric reciprocal space maps (RSMs). The association of a monochromatic primary beam and a position-sensitive detector allows the measurement of RSMs in a few minutes for single crystals and in a few hours for imperfect epitaxic thin films. A detailed description of the setup is given and its potential is illustrated by high-temperature RSM experiments performed on yttria-doped zirconia epitaxic thin films grown on sapphire substrates.

Asymmetrical reciprocal space mapping using X-ray diffraction: a technique for structural characterization of GaN/AlN superlattices

CrystEngComm ◽  
2017 ◽  
Vol 19 (22) ◽  
pp. 2977-2982 ◽  
Author(s):  
H. V. Stanchu ◽  
A. V. Kuchuk ◽  
M. Barchuk ◽  
Yu. I. Mazur ◽  
V. P. Kladko ◽  
...  
Keyword(s):  
Structural Characterization ◽  
Space Mapping ◽  
Reciprocal Space ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
X Ray

scholarly journals Characterization of quantum well wires and surfaces gratings by X-ray diffraction reciprocal space mapping

1993 ◽  
Vol 49 (s1) ◽  
pp. c369-c370
Author(s):  
G. T. Baumbach ◽  
M. Gailhanou ◽  
U. Marti ◽  
P. Silva ◽  
M. Bessiere ◽  
...  
Keyword(s):  
Quantum Well ◽  
Space Mapping ◽  
Reciprocal Space ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
X Ray ◽  
Quantum Well Wires

Reassembly and Oxidation of a Silver Nanoparticle Bilayer Probed by in Situ X-ray Reciprocal Space Mapping

2014 ◽  
Vol 118 (13) ◽  
pp. 7195-7201 ◽  
Author(s):  
Peter Siffalovic ◽  
Karol Vegso ◽  
Monika Benkovicova ◽  
Matej Jergel ◽  
Andrej Vojtko ◽  
...  
Keyword(s):  
Silver Nanoparticle ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
X Ray

In situ three-dimensional X-ray reciprocal-space mapping of InGaAs multilayer structures grown on GaAs(001) by MBE

2015 ◽  
Vol 425 ◽  
pp. 13-15 ◽  
Author(s):  
Takuo Sasaki ◽  
Masamitu Takahasi ◽  
Hidetoshi Suzuki ◽  
Yoshio Ohshita ◽  
Masafumi Yamaguchi
Keyword(s):  
Three Dimensional ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Multilayer Structures ◽  
Reciprocal Space Mapping ◽  
X Ray

In situ Study of Strain Relaxation Mechanisms During Lattice-mismatched InGaAs/GaAs Growth by X-ray Reciprocal Space Mapping

2010 ◽  
Vol 1268 ◽  
Author(s):  
Takuo Sasaki ◽  
Hidetoshi Suzuki ◽  
Akihisa Sai ◽  
Masamitu Takahasi ◽  
Seiji Fujikawa ◽  
...  
Keyword(s):  
Film Thickness ◽  
Film Growth ◽  
Strain Relaxation ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
X Ray ◽  
In Situ Data ◽  
Dislocation Behavior

AbstractThe in situ X-ray reciprocal space mapping (in situ RSM) of symmetric diffraction measurements during lattice-mismatched InGaAs/GaAs(001) growth were performed to investigate the strain relaxation mechanisms. The evolution of the residual strain and crystal quality were obtained as a function of InGaAs film thickness. Based on the results, the correlation between the strain relaxation and the dislocations during the film growth were evaluated. As a result, film thickness ranges with different relaxation mechanisms were classified, and dominant dislocation behavior in each phase were deduced. From the data obtained in in situ measurements, the quantitative strain relaxation models were proposed based on a dislocation kinetic model developed by Dodson and Tsao. Good agreement between the in situ data and the model ensured the validity of the dominant dislocation behavior deduced from the present study.

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