scholarly journals High-temperature (1500 K) reciprocal space mapping on a laboratory X-ray diffractometer

2007 ◽  
Vol 40 (2) ◽  
pp. 332-337 ◽  
Author(s):  
R. Guinebretière ◽  
A. Boulle ◽  
R. Bachelet ◽  
O. Masson ◽  
P. Thomas

A laboratory X-ray diffractometer devoted to thein situcharacterization of the microstructure of epitaxic thin films at temperatures up to 1500 K has been developed. The sample holder was built using refractory materials, and a high-accuracy translation stage allows correction of the dilatation of both the sample and the sample holder. The samples are oriented with respect to the primary beam with two orthogonal rotations allowing the registration of symmetric as well as asymmetric reciprocal space maps (RSMs). The association of a monochromatic primary beam and a position-sensitive detector allows the measurement of RSMs in a few minutes for single crystals and in a few hours for imperfect epitaxic thin films. A detailed description of the setup is given and its potential is illustrated by high-temperature RSM experiments performed on yttria-doped zirconia epitaxic thin films grown on sapphire substrates.

Author(s):  
Peter Siffalovic ◽  
Karol Vegso ◽  
Martin Hodas ◽  
Matej Jergel ◽  
Yuriy Halahovets ◽  
...  

2012 ◽  
Vol 544 ◽  
pp. 34-38 ◽  
Author(s):  
T. Hosokai ◽  
A. Hinderhofer ◽  
A. Vorobiev ◽  
C. Lorch ◽  
T. Watanabe ◽  
...  

2001 ◽  
Vol 206-213 ◽  
pp. 775-778 ◽  
Author(s):  
Gert Roebben ◽  
Chao Zhao ◽  
Ren-Guan Duan ◽  
Jef Vleugels ◽  
Marc M. Heyns ◽  
...  

CrystEngComm ◽  
2017 ◽  
Vol 19 (22) ◽  
pp. 2977-2982 ◽  
Author(s):  
H. V. Stanchu ◽  
A. V. Kuchuk ◽  
M. Barchuk ◽  
Yu. I. Mazur ◽  
V. P. Kladko ◽  
...  

2014 ◽  
Vol 70 (a1) ◽  
pp. C1795-C1795
Author(s):  
Primavera Lopez ◽  
Javier Martinez ◽  
Gabriel Juarez ◽  
Joel Diaz

The heteroepitaxial AlxGa1-xSb/GaSb (001) growth with different x aluminum content, from 0.05 to 0.2 prepared by Liquid Phase Epitaxy (LPE) is presented. The interest in this study is due to the layers of AlxGa1-xSb systems should be well matched for fabrication of sources and detectors operating in the 1.3-1.6 micron range. The layered structure obtained was characterized mainly by high-resolution X-ray diffraction and reciprocal space mapping. In the case of x = 0.05 aluminum content, the relaxation is minimal, and almost without deviation respect to GaSb. As the aluminum content increases above 0.05, the relaxation is larger and deviation from GaSb substrate too. Crystallographic tilt is detected by a shift of layer diffraction maximum on reciprocal space maps. Deviation changes the intensity of layer respect to substrate peak in rocking curves and hence the estimation of thickness of layer obtained from them. A correction for estimated thickness of layers is obtained from mapping.


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