scholarly journals Characterization of quantum well wires and surfaces gratings by X-ray diffraction reciprocal space mapping

1993 ◽  
Vol 49 (s1) ◽  
pp. c369-c370
Author(s):  
G. T. Baumbach ◽  
M. Gailhanou ◽  
U. Marti ◽  
P. Silva ◽  
M. Bessiere ◽  
...  
CrystEngComm ◽  
2017 ◽  
Vol 19 (22) ◽  
pp. 2977-2982 ◽  
Author(s):  
H. V. Stanchu ◽  
A. V. Kuchuk ◽  
M. Barchuk ◽  
Yu. I. Mazur ◽  
V. P. Kladko ◽  
...  

2003 ◽  
Vol 798 ◽  
Author(s):  
K. Tachibana ◽  
Y. Harada ◽  
S. Saito ◽  
S. Nunoue ◽  
H. Katsuno ◽  
...  

ABSTRACTCharacterization by reciprocal space mapping of x-ray diffraction (XRD) intensity was carried out for epitaxial layers of GaN-based laser structures on two GaN substrates: GaN substrate and GaN template on sapphire substrate. The difference between these two substrates was shown clearly. The distribution of XRD intensity of the epitaxial layers on GaN substrate was smaller than that of the epitaxial layers on GaN template on sapphire substrate. In the lasers with the epitaxial structure on GaN substrate, the light output power was as high as 200 mW under continuous-wave operation at room temperature. Excellent noise characteristics with relative intensity noise of -132 dB/Hz were also obtained at a low light output power of 3 mW without any high-frequency modulation. These results support that GaN substrates are promising for realizing GaN-based lasers with high performance.


1997 ◽  
Vol 12 (2) ◽  
pp. 541-545 ◽  
Author(s):  
T. Manabe ◽  
I. Yamaguchi ◽  
W. Kondo ◽  
S. Mizuta ◽  
T. Kumagai

La1−xSrxMnO3 (LSMO) (x = 0−0.3) films were prepared on SrTiO3(001) substrates by the dipping-pyrolysis process using metal naphthenates as starting materials. Epitaxially grown LSMO films were obtained by heat treatment at 800–1200 °C; the fluctuation of alignment of these films, evaluated by reciprocal-space mapping of asymmetric x-ray diffraction, was markedly small, as comparable to that of the substrates. The LSMO films with x = 0.1−0.3 showed metallic conduction behavior at 25–300 K, and the resistivity was as low as that of LSMO single crystals, e.g., 4.5 × 10−4 Ω · cm at 150 K for the film with x = 0.3.


1994 ◽  
Vol 38 ◽  
pp. 201-213 ◽  
Author(s):  
S. R. Lee ◽  
B. L. Doyle ◽  
T. J. Drummond ◽  
J. W. Medernach ◽  
P. Schneider

Abstract Reciprocal space mapping can be efficiently carried out using a position-sensitive x-ray detector (PSD) coupled to a traditional double-axis diffractometer. The PSD offers parallel measurement of the total scattering angle of all diffracted x-rays during a single rocking-curve scan. As a result, a two-dimensional reciprocal space map can be made in a very short time similar to that of a one-dimensional rocking-curve scan. Fast, efficient reciprocal space mapping offers numerous routine advantages to the x-ray diffraction analyst. Some of these advantages arc the explicit differentiation of lattice strain from crystal orientation effects in strain-relaxed heteroepitaxial layers; the nondestructive characterization of the size, shape and orientation of nanocrystalline domains in ordered-alloy epilayers; and the ability to measure the average size and shape of voids in porous epilayers. Here, the PSD-based diffractometer is described, and specific examples clearly illustrating the advantages of complete reciprocal space analysis are presented.


2014 ◽  
Vol 70 (a1) ◽  
pp. C1795-C1795
Author(s):  
Primavera Lopez ◽  
Javier Martinez ◽  
Gabriel Juarez ◽  
Joel Diaz

The heteroepitaxial AlxGa1-xSb/GaSb (001) growth with different x aluminum content, from 0.05 to 0.2 prepared by Liquid Phase Epitaxy (LPE) is presented. The interest in this study is due to the layers of AlxGa1-xSb systems should be well matched for fabrication of sources and detectors operating in the 1.3-1.6 micron range. The layered structure obtained was characterized mainly by high-resolution X-ray diffraction and reciprocal space mapping. In the case of x = 0.05 aluminum content, the relaxation is minimal, and almost without deviation respect to GaSb. As the aluminum content increases above 0.05, the relaxation is larger and deviation from GaSb substrate too. Crystallographic tilt is detected by a shift of layer diffraction maximum on reciprocal space maps. Deviation changes the intensity of layer respect to substrate peak in rocking curves and hence the estimation of thickness of layer obtained from them. A correction for estimated thickness of layers is obtained from mapping.


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