Peltier Coefficient

2012 ◽  
pp. 2039-2039
Author(s):  
Patrick M. Winter ◽  
Gregory M. Lanza ◽  
Samuel A. Wickline ◽  
Marc Madou ◽  
Chunlei Wang ◽  
...  
Keyword(s):  
Peltier Coefficient

Measurement of the Peltier coefficient of semiconductors by lock-in thermography

2009 ◽  
Vol 95 (5) ◽  
pp. 052107 ◽  
Author(s):  
Hilmar Straube ◽  
Jan-Martin Wagner ◽  
Otwin Breitenstein
Keyword(s):  
Peltier Coefficient ◽  
Lock In

scholarly journals The heat of transfer and the Peltier coefficient of electrolytes

2020 ◽  
Vol 5 ◽  
pp. 100040 ◽  
Author(s):  
Astrid Fagertun Gunnarshaug ◽  
Signe Kjelstrup ◽  
Dick Bedeaux
Keyword(s):  
Peltier Coefficient

Thermal conductance and the Peltier coefficient of carbon nanotubes

1996 ◽  
Vol 53 (16) ◽  
pp. 11186-11192 ◽  
Author(s):  
M. F. Lin ◽  
D. S. Chuu ◽  
K. W. -K. Shung
Keyword(s):  
Carbon Nanotubes ◽  
Thermal Conductance ◽  
Peltier Coefficient

Peltier coefficient measurement in a thermoelectric module

2013 ◽  
Vol 34 (5) ◽  
pp. 1255-1262 ◽  
Author(s):  
Javier Garrido ◽  
Alejandro Casanovas ◽  
José María Chimeno
Keyword(s):  
Thermoelectric Module ◽  
Coefficient Measurement ◽  
Peltier Coefficient

Galvanomagnetische, thermoelektrische und thermomagnetische Eigenschaften von Wismut-Tellurid für beliebige Magnetfelder

1967 ◽  
Vol 22 (12) ◽  
pp. 2086-2096
Author(s):  
Udo Hübner
Keyword(s):  
Magnetic Field ◽  
Magnetic Fields ◽  
Its Region ◽  
Energy Current ◽  
Starting Point ◽  
Mass Tensor ◽  
Current Densities ◽  
Peltier Coefficient ◽  
Scattering Time ◽  
The Magnetic Field

The four matrices of the electrical and the energy current densities are derived for bismuth-Telluride in arbitrary magnetic fields on the basis of DRABBLE'S six-ellipsoid-model. The scattering time will be taken anisotropic but not necessarily diagonal in the same system as the mass tensor. The starting point is BOLTZMANN'S transport equation in its region of validity. These four matrices are converted to resistance, absolute thermopower, PELTIER coefficient and electronic part of the heat conductivity for vanishing magnetic field and for magnetic fields parallel to the trigonal and the binary axis of the crystal. Saturation formulas for all directions of the magnetic field are deduced. Four resistance components mesured in dependence of the magnitude of the magnetic field are used to evaluate the band parameters which are different once more from data of DRABBLE and TESTARDI; but they are independent of the magnitude of the magnetic field within the limit of error.

Bias-Dependent Peltier Coefficient in Bipolar Devices

2001 ◽  
Author(s):  
Kevin P. Pipe ◽  
Rajeev J. Ram ◽  
Ali Shakouri
Keyword(s):  
Laser Diodes ◽  
Internal Cooling ◽  
Drift Diffusion ◽  
Bipolar Devices ◽  
Microelectronic Devices ◽  
Thermal Constraints ◽  
Peltier Coefficient ◽  
Semiconductor Laser Diodes ◽  
Device Operation ◽  
Diode Current

Abstract Temperature stabilization is important in many microelectronic devices due to thermal constraints on device operation and lifetime. The work described here is an investigation of thermoelectric phenomena in bipolar devices, specifically the p-n diode. Current injection can modify the Peltier coefficient at interfaces; this can give rise to thermoelectric cooling or heating depending on device parameters. The bias-dependent Peltier coefficient is modeled using self-consistent drift-diffusion, and implications for device design are examined. The different regimes of bias for which cooling is achieved are described, as well as the effects of device length, doping, and heterojunction band offset. Extensions of the model are given for applications such as the internal cooling of semiconductor laser diodes.

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