Low-Energy Accelerated-Ion Doping of Si during Molecular Beam Epitaxy: Incorporation Probabilities, Depth Distributions, and Electrical Properties

1990 ◽  
pp. 313-316
Author(s):  
L. C. Markert ◽  
J. Knall ◽  
J.-P. Noel ◽  
M.-A. Hasan ◽  
J. E. Greene ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Low Energy ◽  
Ion Doping ◽  
Depth Distributions

Electrical properties of Si(100) films doped with low‐energy (≤150 eV) Sb ions during growth by molecular beam epitaxy

1988 ◽  
Vol 53 (18) ◽  
pp. 1732-1734 ◽  
Author(s):  
P. Fons ◽  
N. Hirashita ◽  
L. C. Markert ◽  
Y.‐W. Kim ◽  
J. E. Greene ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Low Energy

In-situ low energy BF2+ion doping for silicon molecular beam epitaxy

1982 ◽  
Vol 3 (5) ◽  
pp. 138-140 ◽  
Author(s):  
R.G. Swartz ◽  
J.H. McFee ◽  
A.M. Voshchenkov ◽  
S.N. Finegan ◽  
V.D. Archer ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Low Energy ◽  
Ion Doping

Growth of Undoped ZnO Films with Improved Electrical Properties by Radical Source Molecular Beam Epitaxy

2001 ◽  
Vol 40 (Part 1, No. 1) ◽  
pp. 250-254 ◽  
Author(s):  
Ken Nakahara ◽  
Tetsuhiro Tanabe ◽  
Hidemi Takasu ◽  
Paul Fons ◽  
Kakuya Iwata ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zno Films
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