III–V compound semiconductors for use in thin film cells or in monolytic multilayer cells

1988 ◽  
pp. 234-301
Author(s):  
L. J. Giling ◽  
G. Borghs ◽  
L. Zanotti ◽  
C. Verie ◽  
M. Garozzo ◽  
...  
Keyword(s):  
Thin Film ◽  
Compound Semiconductors

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

Preparation of Bismuth Telluride Compound Semiconductors Through Thin Film Reactions

2019 ◽  
Vol 2 (5) ◽  
pp. 143-150
Author(s):  
Chien-Neng Liao ◽  
D. H. She ◽  
B. J. Liao ◽  
S. W. Kuo
Keyword(s):  
Thin Film ◽  
Bismuth Telluride ◽  
Compound Semiconductors

scholarly journals Structural characterization of off-stoichiometric kesterite-type Cu2ZnGeSe4 compound semiconductors: from cation distribution to intrinsic point defect density

CrystEngComm ◽  
2018 ◽  
Vol 20 (11) ◽  
pp. 1491-1498 ◽  
Author(s):  
R. Gunder ◽  
J. A. Márquez-Prieto ◽  
G. Gurieva ◽  
T. Unold ◽  
S. Schorr
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Point Defect ◽  
Structural Characterization ◽  
Cation Distribution ◽  
Defect Density ◽  
Compound Semiconductors ◽  
Thin Film Solar Cells ◽  
Intrinsic Point Defect

The substitution of Ge4+ for Sn4+ in Cu2ZnSn(S,Se)4 (CZTSSe) kesterite-type absorber layers for thin film solar cells has been proven to enhance the opto-electronic properties of the material.

Contract Wafer Bumping of Compound Semiconductors

2010 ◽  
Vol 2010 (DPC) ◽  
pp. 002225-002248
Author(s):  
Andrew Strandjord ◽  
Thorsten Teutsch ◽  
Axel Scheffler ◽  
Bernd Otto ◽  
Jing Li
Keyword(s):  
Thin Film ◽  
Material Properties ◽  
Bulk Material ◽  
Compound Semiconductors ◽  
Processing Conditions ◽  
Thin Film Layer ◽  
Film Layer ◽  
Materials Used ◽  
Bond Pads ◽  
Silicon Based

There are a number of qualified technologies for backend processing of traditional silicon based semiconductors. GaAs wafers have several unique properties that make these established technologies inadequate, including: the presence of air bridges, gold bond pads, and the bulk material properties of the GaAs. In this paper, we describe a process flow and a set of materials which enable the pad resurfacing, UBM deposition, and solder bumping of GaAs wafers. The gold bond pads are resurfaced using a resist liftoff technology and TiCu sputtering. The combination of these allows for pad resurfacing while protecting the air bridges and GaAs. The UBM is deposited on these new TiCu pads by using a thin film layer to again protect the air bridges and GaAs, followed by electrolessly plating nickel and gold. The solder bumping is accomplished using a laser based sphere drop process which is fluxless. To complete the backend processing, the bumped GaAs wafers are then diced and sorted into waffle packs. Details will be discussed relative to the processing conditions, materials used, and yields.

Clean Electron Microscope Substrate Films Used for Micrometeorite Collection and Study

1967 ◽  
Vol 25 ◽  
pp. 366-367
Author(s):  
D. M. Davies ◽  
R. Kemner ◽  
E. F. Fullam
Keyword(s):  
Thin Film ◽  
Electron Microscope ◽  
High Altitude ◽  
Amyl Acetate ◽  
Temperature Variations ◽  
Film Forming ◽  
Film Specimen ◽  
Particulate Contaminants

All serious electron microscopists at one time or another have been concerned with the cleanliness and freedom from artifacts of thin film specimen support substrates. This is particularly important where there are relatively few particles of a sample to be found for study, as in the case of micrometeorite collections. For the deposition of such celestial garbage through the use of balloons, rockets, and aircraft, the thin film substrates must have not only all the attributes necessary for use in the electron microscope, but also be able to withstand rather wide temperature variations at high altitude, vibration and shock inherent in the collection vehicle's operation and occasionally an unscheduled violent landing.Nitrocellulose has been selected as a film forming material that meets these requirements yet lends itself to a relatively simple clean-up procedure to remove particulate contaminants. A 1% nitrocellulose solution is prepared by dissolving “Parlodion” in redistilled amyl acetate from which all moisture has been removed.

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