Electronic and Transport Properties of Granular Materials

Author(s):  
Morrel H. Cohen
2018 ◽  
Vol 32 (18) ◽  
pp. 1840011 ◽  
Author(s):  
Wenxiang Xu ◽  
Hongguang Sun ◽  
Wen Chen ◽  
Huisu Chen

Granular materials as typical soft matter, their transport properties play significant roles in durability and service life in relevant practical engineering structures. Physico-mechanical properties of materials are generally dependent of their microstructures including interfacial and porous characteristics. The formation of such microstructures is directly related to particle components in granular materials. Understanding the interactive mechanism of particle components, microstructures, and transport properties is a problem of great interest in materials research community. The resulting rigorous component-structure-property relations are also valuable for material design and microstructure optimization. This review article describes state-of-the-art progresses on modeling particle components, interfacial and porous configurations and incorporating these internal structural characteristics into modeling transport properties of granular materials. We mainly focus on three issues involving the simulation for geometrical components, the quantitative characterization for interfacial and porous microstructures, and the modeling strategies for diffusive behaviors of granular materials. In the first aspect, in-depth reviews are presented to realize complex morphologies of geometrical particles, to detect the overlap between adjacent nonspherical particles, and to simulate the random packings of nonspherical particles. In the second aspect, we emphasize the development progresses on the interfacial thickness and porosity distribution, the interfacial volume fraction, and the continuum percolation of soft particles representing compliant interfaces and discrete pores. In the final aspect, a literature review is also provided on modeling of transport properties on the forefront of the effective diffusion and anomalous diffusion in multiphase granular materials. Finally, some conclusions and perspectives for future studies are provided.


1988 ◽  
Vol 102 ◽  
pp. 165-174
Author(s):  
C. de Michelis

AbstractImpurities being an important concern in tokamaks, spectroscopy plays a key role in their understanding. Techniques for the evaluation of concentrations, power losses and transport properties are surveyed, and a few developments are outlined.


Author(s):  
Alain Claverie ◽  
Zuzanna Liliental-Weber

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.


1998 ◽  
Vol 77 (5) ◽  
pp. 1413-1425 ◽  
Author(s):  
Dietrich E.Wolf, Farhang Radjai, Sabine Dipp
Keyword(s):  

1993 ◽  
Vol 3 (12) ◽  
pp. 2173-2188
Author(s):  
N. G. Chechenin ◽  
A. V. Chernysh ◽  
V. V. Korneev ◽  
E. V. Monakhov ◽  
B. V. Seleznev

1989 ◽  
Vol 50 (21) ◽  
pp. 3233-3242 ◽  
Author(s):  
M. Očko ◽  
E. Babić

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