Resonant Tunneling Through an Impurity Level: A Probe of Coherent States in a Disordered Metal

Author(s):  
Thomas Schmidt ◽  
Peter König ◽  
Rolf J. Haug ◽  
Edward McCann ◽  
Vladimir I. Fal’ko
1998 ◽  
Vol 184-185 (1-2) ◽  
pp. 806-809
Author(s):  
M Keim

1977 ◽  
Vol 38 (11) ◽  
pp. 1443-1448 ◽  
Author(s):  
G. Sarrabayrouse ◽  
J. Buxo ◽  
D. Esteve

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-585-C5-588 ◽  
Author(s):  
R. E. NAHORY ◽  
N. TABATABAIE

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS

2000 ◽  
Vol 631 ◽  
Author(s):  
J. G. Fleming ◽  
E. Chow ◽  
S.-Y. Lin

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.


2012 ◽  
Vol E95.C (5) ◽  
pp. 871-878
Author(s):  
Masanari FUJITA ◽  
Mitsufumi SAITO ◽  
Michihiko SUHARA

2019 ◽  
Vol 19 (2) ◽  
pp. 379-390
Author(s):  
Z Heibati ◽  
A Mahdifar ◽  
E Amooghorban ◽  
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