Abstract
The effect of 60Co-irradiation) on the electrical parameters in the Au/(ZnOMn:PVP)/n-Si SDs has been investigated using the current-voltage (I-V) and capacitance/conductance-voltage (C/G-V) measurements. Firstly, the values of reverse-saturation-current (Io), ideality-factor (n), barrier-height (BH), shunt/series resistances (Rsh, Rs), and rectifying-rate (RR) were extracted from the I-V data before and after gamma-irradiation (5 and 60 kGy) using thermionic-emission (TE), Norde, and Cheung methods. The surface-states (Nss) versus energy (Ec-Ess) profile was extracted from I-V data considering voltage-dependent of n and BH using the Card-Rhoderick method. Secondly, the doping-donor atoms (Nd), Fermi-energy (EF), BH, maximum electric-field (Em), and depletion-layer width (Wd) were extracted from the linear-part of reverse-bias C-2-V plot for 100 kHz before and after irradiation. Finally, the voltage-dependent profiles of Rs and radiation-induced of Nss were extracted from the C/G-V plots by using Nicollian-Brews and the difference between C-V plots before and after irradiation, respectively. The peak behavior in the Nss-V plots and shifts in its position was attributed to special-distribution of Nss at (ZnOMn:PVP)/n-Si interface and restructure/reordering of them under radiation and electric field. Experimental results show that gamma-irradiation is more effective both on the I-V and C/G-V plots or electrical parameters, and hence the fabricated Au/(ZnOMn:PVP)/n-Si SDs can be used as a radiation-sensor.