New Time Scales: Removing Ambiguities

1995 ◽  
pp. 255-255
Author(s):  
V. A. Brumberg
Keyword(s):  
1995 ◽  
Vol 10 ◽  
pp. 256-257 ◽  
Author(s):  
Toshio Fukushima

The location-independent part of TCB–TCG, the difference between the two new time scales adopted by the IAU (1992), was integrated numerically for three JPL planetary/lunar ephemerides; DE102, DE200, and DE245. The differences among these three integrations were mostly explained by the difference in the adopted constants of the ephemerides. It was shown that the post-Newtonian correction and the perturbation by asteroids are negligible except for the mean rate, LC The comparison of these numerical integrations with the analytical formulas of Hirayama et al. (1987) and Fairhead and Bretagnon (1990) as well as their extended versions lead to the best estimate of LC asCombining this with the recent value of the geoid potential in Bursa et al. (1992), we estimated the value of LB, the scale difference between TCB and TT, as


2021 ◽  
Vol 2021 (1) ◽  
Author(s):  
Pshtiwan Othman Mohammed ◽  
Thabet Abdeljawad ◽  
Manar A. Alqudah ◽  
Fahd Jarad

AbstractWe introduce new time scales on $\mathbb{Z}$ Z . Based on this, we investigate the discrete inequality of Hermite–Hadamard type for discrete convex functions. Finally, we improve our result to investigate the discrete fractional inequality of Hermite–Hadamard type for the discrete convex functions involving the left nabla and right delta fractional sums.


Author(s):  
James B. Pawley

Past: In 1960 Thornley published the first description of SEM studies carried out at low beam voltage (LVSEM, 1-5 kV). The aim was to reduce charging on insulators but increased contrast and difficulties with low beam current and frozen biological specimens were also noted. These disadvantages prevented widespread use of LVSEM except by a few enthusiasts such as Boyde. An exception was its use in connection with studies in which biological specimens were dissected in the SEM as this process destroyed the conducting films and produced charging unless LVSEM was used.In the 1980’s field emission (FE) SEM’s came into more common use. The high brightness and smaller energy spread characteristic of the FE-SEM’s greatly reduced the practical resolution penalty associated with LVSEM and the number of investigators taking advantage of the technique rapidly expanded; led by those studying semiconductors. In semiconductor research, the SEM is used to measure the line-width of the deposited metal conductors and of the features of the photo-resist used to form them. In addition, the SEM is used to measure the surface potentials of operating circuits with sub-micrometer resolution and on pico-second time scales. Because high beam voltages destroy semiconductors by injecting fixed charges into silicon oxide insulators, these studies must be performed using LVSEM where the beam does not penetrate so far.


2013 ◽  
Vol 40 (3) ◽  
pp. 185-203
Author(s):  
Dhahri Maher ◽  
Bellakhel Ghazi ◽  
Chahed Jamel

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