Electromagnetic Analysis for Microwave Applications

Author(s):  
J. C. Rautio
Author(s):  
Z. Liliental-Weber ◽  
C. Nelson ◽  
R. Ludeke ◽  
R. Gronsky ◽  
J. Washburn

The properties of metal/semiconductor interfaces have received considerable attention over the past few years, and the Al/GaAs system is of special interest because of its potential use in high-speed logic integrated optics, and microwave applications. For such materials a detailed knowledge of the geometric and electronic structure of the interface is fundamental to an understanding of the electrical properties of the contact. It is well known that the properties of Schottky contacts are established within a few atomic layers of the deposited metal. Therefore surface contamination can play a significant role. A method for fabricating contamination-free interfaces is absolutely necessary for reproducible properties, and molecularbeam epitaxy (MBE) offers such advantages for in-situ metal deposition under UHV conditions


2015 ◽  
Vol 135 (9) ◽  
pp. 515-521
Author(s):  
Yu-ichi Hayashi ◽  
Naofumi Homma ◽  
Takaaki Mizuki ◽  
Takafumi Aoki ◽  
Hideaki Sone

2004 ◽  
Vol 124 (2) ◽  
pp. 321-326 ◽  
Author(s):  
Toshie Takeuchi ◽  
Takafumi Nakagawa ◽  
Mitsuru Tsukima ◽  
Kenichi Koyama ◽  
Nobumoto Tohya ◽  
...  

2012 ◽  
Vol 132 (7) ◽  
pp. 684-689 ◽  
Author(s):  
Md. Raju Ahmed ◽  
Masaru Ishii

Author(s):  
Hongying LIU ◽  
Xin JIN ◽  
Yukiyasu TSUNOO ◽  
Satoshi GOTO

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