Other Nondestructive Measurement Technologies

Author(s):  
Xiaobo Zou ◽  
Jiewen Zhao
Author(s):  
Ilwoo Jung ◽  
Byoungdeok Choi ◽  
Bonggu Sung ◽  
Daejung Kim ◽  
Ilgweon Kim ◽  
...  

Abstract Body effect is the key characteristic of DRAM cell transistor. Conventional method uses a TEG structure for body effect measurement. But this measurement is not accurate, because TEG structure has only several transistors and it is located outside of the DRAM die. This paper suggests a viable method for measuring DRAM cell transistor body effect. It uses a memory test system for fast, massive, nondestructive measurement. Newly developed method can measure 100,000 DRAM cell body effects in two minute, without sample damage. The test gives one median value and 100,000 individual values of body effects. Median value of measured body effects is equal to the TEG body effect. An individual DRAM cell body effect has a correlation with the fin height.


2002 ◽  
Vol 67 (8) ◽  
pp. 3164-3169 ◽  
Author(s):  
D.B. Papkovsky ◽  
M.A. Smiddy ◽  
N.Y. Papkovskaia ◽  
J.P. Kerry

2020 ◽  
Vol 393 ◽  
pp. 125765 ◽  
Author(s):  
Min Zhai ◽  
Alexandre Locquet ◽  
Cyrielle Roquelet ◽  
Patrice Alexandre ◽  
Laurence Daheron ◽  
...  

1986 ◽  
Vol 22 (1) ◽  
pp. 128-132
Author(s):  
V. I. Alekseenko ◽  
V. I. Krylovich ◽  
P. N. Logvinovich

1997 ◽  
Vol 15 (4) ◽  
pp. 305-321 ◽  
Author(s):  
Adrian F. Richards ◽  
Ronald C. Chaney

2003 ◽  
Vol 12 (4) ◽  
pp. 530-535 ◽  
Author(s):  
B. Rogé ◽  
A. Fahr ◽  
J.S.R. Giguère ◽  
K.I. McRae

1999 ◽  
Vol 591 ◽  
Author(s):  
Tieyu Zheng ◽  
Steven Danyluk

ABSTRACTThis paper reports the development of a shadow moiré technique to measure the in-plane residual stresses of thin, flat strips. This is an extension of prior work on the measurement of in-plane residual stresses in silicon plates and wafers. Phase stepping shadow moir6 and digital image processing techniques are employed to measure the deflections of the silicon plate specimens subjected to three-point-bending at several different loads. The measured deflections over the area of the silicon plates are fitted with an equation represented by a 2-D polynomial. With the theory of thin plates with large deflection, the fitting coefficients are used to extract the in-plane stresses at the different bending load. The residual stress is resolved by linear regression of the in-plane stresses versus bending loads.


2001 ◽  
Vol 55 (10) ◽  
pp. 1368-1374 ◽  
Author(s):  
Rinaldo Cubeddu ◽  
Cosimo D'Andrea ◽  
Antonio Pifferi ◽  
Paola Taroni ◽  
Alessandro Torricelli ◽  
...  

Time-resolved reflectance has been used for the nondestructive measurement of optical properties in apples. The technique is based on the detection of the temporal dispersion of a short laser pulse injected into the probed medium. The time distribution of re-emitted photons interpreted with a solution of the diffusion equation yields the mean values of the absorption and reduced scattering coefficients of the medium. The proposed technique proved useful for the measurement of the absorption and scattering spectra of different varieties of apples, revealing the spectral shape of chlorophyll. No major variations were observed in the experimental data when the fruit was peeled, showing that the optical properties measured were those of the pulp. With this technique the change in chlorophyll absorption during storage and ripening could be followed. Finally, a compact prototype working at few selected wavelengths was designed and constructed, demonstrating potentialities of the technique for industrial applications.


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