Physics of Heavily Doped Diamond: Electronic States and Superconductivity

2019 ◽  
pp. 65-96
Author(s):  
Takanori Wakita ◽  
Kensei Terashima ◽  
Takayoshi Yokoya
Keyword(s):  
Electronic States ◽  
Heavily Doped

Electronic States and Optical Gap of Phosphorus-Doped Silicon Nanocrystals Embedded in a Silica Host Matrix

2013 ◽  
Vol 205-206 ◽  
pp. 486-491 ◽  
Author(s):  
Anton A. Konakov ◽  
Vladimir A. Belyakov ◽  
Vladimir A. Burdov
Keyword(s):  
Function Approximation ◽  
Silicon Nanocrystals ◽  
Electronic States ◽  
Orbit Splitting ◽  
Host Matrix ◽  
Optical Gap ◽  
Ground Singlet State ◽  
Heavily Doped ◽  
Phosphorus Doped ◽  
Electron Ground State

Using the envelope-function approximation the electronic states and the optical gap of silicon nanocrystals heavily doped with phosphorus have been calculated. Assuming the uniform impurity distribution over the crystallite volume we have found the fine structure of the electron ground state (induced by the valley-orbit interaction) and the optical gap as a function of the crystallite size and donor concentration. It is shown that the energy of the ground singlet state decreases almost linearly as the concentration increases, while the valley-orbit splitting increases nonlinearly. Phosphorus doping also results in the decrease of the nanocrystal gap with increasing the impurity concentration.

Infrared Optical Properties of Ion Implanted and Laser Annealed Silicon

1980 ◽  
Vol 1 ◽  
Author(s):  
Masanobu Miyao ◽  
Teruaki Motooka ◽  
Nobuyoshi Natsuaki ◽  
Takashi Tokuyama
Keyword(s):  
Optical Properties ◽  
Carrier Concentration ◽  
Laser Annealing ◽  
Electronic States ◽  
Free Carrier ◽  
High Dose ◽  
Carrier Relaxation ◽  
Carrier Effective Mass ◽  
Heavily Doped ◽  
Infrared Optical Properties

ABSTRACTElectronic states of extremely heavily doped n-type Si obtained by high dose ion implantation and laser annealing are investigated by measuring the infrared optical properties. Free carrier effective mass (m*) and carrier relaxation time (τ) are obtained as a function of carrier concentration (1019−5×1021 cm−3). Values of m* and τ increase and decrease, respectively, with the increase of carrier concentration. These results are discussed in relation to the occupation of electrons in a new valley of the conduction band.

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

Integration of Core-Edge Spectroscopy Methods for the Study of Polymers

1996 ◽  
Vol 54 ◽  
pp. 154-155
Author(s):  
E. G. Rightor
Keyword(s):  
Excited State ◽  
Polymer Blends ◽  
Gas Phase ◽  
Spatial Resolution ◽  
High Spatial Resolution ◽  
Electronic States ◽  
Core Electron ◽  
Bulk Solids ◽  
Development Application

Core edge spectroscopy methods are versatile tools for investigating a wide variety of materials. They can be used to probe the electronic states of materials in bulk solids, on surfaces, or in the gas phase. This family of methods involves promoting an inner shell (core) electron to an excited state and recording either the primary excitation or secondary decay of the excited state. The techniques are complimentary and have different strengths and limitations for studying challenging aspects of materials. The need to identify components in polymers or polymer blends at high spatial resolution has driven development, application, and integration of results from several of these methods.

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