A Discussion About Hydrogen Diffusion in n+pp+ Polysilicon Solar Cells Following Analysis of Both Dopant Deactivation and Defects Passivation

Author(s):  
Djamel Madi ◽  
Djamel Eddine Belfennache
1999 ◽  
Vol 557 ◽  
Author(s):  
M. Kanbe ◽  
T. Komaru ◽  
K. Fukutani ◽  
T. Kamiya ◽  
C.M. Fortmann ◽  
...  

AbstractSeveral promising new methods for amorphous silicon solar cell preparation involve high substrate temperatures and/or very reactive atmospheres. When incorporated into solar cells, the performance of these layers has often been less than expected due to enhanced diffusion and/or chemical reactions. This poor performance results from the harsh deposition environments. Deleterious effects include darken of TCO coated glass substrates due to hydrogen diffusion to and hydrogen reduction at the TCO interface when solar cells are prepared in the p-i-n deposition sequence. Alternatively, the deposition of TCO layers onto amorphous layers also involves rather harsh oxidizing conditions that have a deleterious effect on the top most amorphous silicon-based p-layers. Strategic use of blocking layers results in remarkably improved solar cell performance. A thin Cr layer (probably becoming Cr2O3) shows ability to improve the performance of both n-ip and p-i-n solar cells by inhibiting both O and H diffusion.


2018 ◽  
Vol 13 (10) ◽  
pp. 1557-1563 ◽  
Author(s):  
Jonghun Mun ◽  
Srikanta Palei ◽  
Rajkumar Sahu ◽  
Jaeho Choi ◽  
Keunjoo Kim

We investigated the effect of thermal annealing on the performances of Si solar cells. The Si solar cells were fabricated on p-type microtextured Si wafers using a standard cell fabrication process. The fabricated cells were annealed at 250 °C for 60, 80, and 90 min using a halogen lamp heater in N2 ambient. The annealed sample with a time of 60 min showed enhanced optical properties of light absorption, quantum efficiency, and minority carrier lifetime but did not show enhanced cell conversion efficiency. However, while the cell annealed for 90 min showed different optical properties, it showed the highest conversion efficiency of 17.35% compared to the reference cell of 17.14%, indicating the total recovery of the light soaking effect. We further analyzed the hydrogen-related chemical bonding structures for the dopant activation throughout hydrogen diffusion and the electroluminescence by a radiative recombination of a p–n junction.


2004 ◽  
Vol 813 ◽  
Author(s):  
B.L. Sopori ◽  
Y. Zhang ◽  
R. Reedy ◽  
K. M. Jones ◽  
Y. Yan ◽  
...  

ABSTRACTA mechanism for transport and diffusion of H in a silicon solar cell by PECVD SiN:H process is proposed. Plasma-induced surface damage “stores” H during the nitride deposition, which is driven into the bulk of the solar cell during metal-contact firing. Theoretical and experimental results are given that verify this mechanism.


2012 ◽  
Vol 1426 ◽  
pp. 57-62
Author(s):  
Ka-Hyun Kim ◽  
Erik V. Johnson ◽  
Samir Kasouit ◽  
Pere Roca i Cabarrocas

ABSTRACTHydrogenated polymorphous silicon (pm-Si:H) is one of the most promising candidates for a stable top cell material in multi-junction thin film solar cells. Solar cells using pm-Si:H as their absorbing layer show very interesting degradation kinetics when compared to hydrogenated amorphous silicon (a-Si:H), summarized by macroscopic structural changes and irreversible changes in solar cell characteristics, while nevertheless preserving a higher stabilized efficiency. Notably, pm-Si:H solar cells, once degraded, respond to neither annealing nor further light-soaking. Such results suggest a device degradation mechanism including structural changes, active hydrogen motion, and interface delamination mediated by fast hydrogen diffusion and accumulation at the interface. Interestingly, a similar behavior was reported for a-Si:H solar cells under severe light soaking conditions (at 350 °C or under 50 suns) while pm-Si:H solar cells show such behavior under 1 sun at 40 °C.


1993 ◽  
Vol 303 ◽  
Author(s):  
Bhushan L. Sopori

ABSTRACTAn improved technique for impurity/defect passivation of silicon solar cells is described. A low-energy hydrogen implantation is performed from the back side of solar cells to produce a deep hydrogen diffusion. The deep diffusion is believed to be caused by the formation of a mobile hydrogen-vacancy (H-V) complex. Next, a layer of Al is deposited on the hydrogenated side and an Optical Processing (OP) step is performed. The OP step accomplishes several objectives that include formation of an ohmic contact, dissociation of H-V complexes to release hydrogen that can participate in further passivation, and dissolution and regrowth of the highly defected surface layer.


Nanoscale ◽  
2019 ◽  
Vol 11 (45) ◽  
pp. 21824-21833 ◽  
Author(s):  
Jyoti V. Patil ◽  
Sawanta S. Mali ◽  
Chang Kook Hong

Controlling the grain size of the organic–inorganic perovskite thin films using thiourea additives now crossing 2 μm size with >20% power conversion efficiency.


2011 ◽  
pp. 011111165738
Author(s):  
Marc Reisch
Keyword(s):  

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