Selectively dopedn-AlxGa1?xAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistors
1984 ◽
Vol 33
(3)
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pp. 183-193
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1984 ◽
Vol 33
(2)
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pp. 63-76
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1991 ◽
Vol 6
(2)
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pp. 103-107
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2002 ◽