Selectively δ‐doped AlxGa1−xAs/GaAs heterostructures with high two‐dimensional electron‐gas concentrationsn2DEG≥1.5×1012cm−2for field‐effect transistors
1991 ◽
Vol 6
(2)
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pp. 103-107
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2002 ◽
1984 ◽
Vol 33
(3)
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pp. 183-193
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2009 ◽