heterojunction field effect transistors Recently Published Documents

Contact Layer ◽

The mechanism of the enhanced intensity for polarization Coulomb field scattering in AlN/GaN heterojunction field effect transistors with submicron gate length

Solid-State Electronics ◽

10.1016/j.sse.2021.108164 ◽

2021 ◽

pp. 108164

Author(s):

Guangyuan Jiang ◽

Yuanjie Lv ◽

Zhaojun Lin ◽

Yongxiong Yang ◽

Yang Liu ◽

...

Keyword(s):

Field Effect ◽

Coulomb Field ◽

Gate Length ◽

Polarization Coulomb Field Scattering ◽

Analysing Structural Asymmetry on the Nonmonotonic Electron Mobility of Pseudomorphic Heterojunction Field Effect Transistors

2021 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic50843.2021.9455826 ◽

2021 ◽

Author(s):

Sangita R. Panda ◽

Trinath Sahu ◽

Ajit Kumar Panda

Keyword(s):

Electron Mobility ◽

Field Effect ◽

Structural Asymmetry ◽

Post oxidation in improving the Schottky-gate MgZnO/ZnO heterojunction field-effect transistors fabricated by RF sputtering

Materials Science and Engineering B ◽

10.1016/j.mseb.2021.115063 ◽

2021 ◽

Vol 266 ◽

pp. 115063

Author(s):

Jun Dar Hwang ◽

Chung Min Chu

Keyword(s):

Field Effect ◽

Rf Sputtering ◽

Investigation of normally-off GaN-based p-channel and n-channel heterojunction field-effect transistors for monolithic integration

Results in Physics ◽

10.1016/j.rinp.2021.104209 ◽

2021 ◽

pp. 104209

Author(s):

Weihang Zhang ◽

Xi Liu ◽

Liyu Fu ◽

Ren Huang ◽

Shenglei Zhao ◽

...

Keyword(s):

Field Effect ◽

Monolithic Integration ◽

Insight into Buffer Trap-Induced Current Saturation and Current Collapse in GaN RF Heterojunction Field-Effect Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.3034062 ◽

2020 ◽

Vol 67 (12) ◽

pp. 5460-5465

Author(s):

Durgesh C. Tripathi ◽

Michael J. Uren ◽

Dan Ritter

Keyword(s):

Field Effect ◽

Induced Current ◽

Current Collapse ◽

Current Saturation ◽

Heterojunction Field Effect Transistors ◽

Insight Into

Photo-Induced Negative Differential Transconductance in Back-Gated Layered MoSe2/p-Ge Heterojunction Field Effect Transistors

ACS Applied Electronic Materials ◽

10.1021/acsaelm.0c00178 ◽

2020 ◽

Vol 2 (6) ◽

pp. 1567-1573

Author(s):

Wasi Uddin ◽

Veerendra Dhyani ◽

Gufran Ahmad ◽

Vikram Kumar ◽

Pranaba K. Muduli ◽

...

Keyword(s):

Field Effect ◽

Al0.65Ga0.35N/Al0.4Ga0.6N Micro-Channel Heterojunction Field Effect Transistors With Current Density Over 900 mA/mm

IEEE Electron Device Letters ◽

10.1109/led.2020.2977997 ◽

2020 ◽

Vol 41 (5) ◽

pp. 677-680 ◽

Cited By ~ 1

Author(s):

Hao Xue ◽

Kamal Hussain ◽

Towhidur Razzak ◽

Mikhail Gaevski ◽

Shahadat Hasan Sohel ◽

...

Keyword(s):

Current Density ◽

Field Effect ◽

Micro Channel ◽

GaN based negative capacitance heterojunction field-effect transistors with <30 mV/dec subthreshold slope for steep switching operation

Results in Physics ◽

10.1016/j.rinp.2020.102950 ◽

2020 ◽

Vol 16 ◽

pp. 102950

Author(s):

S.-W. Han ◽

S.-K. Eom ◽

M.-J. Kang ◽

H.-S. Kim ◽

K.-S. Seo ◽

...

Keyword(s):

Field Effect ◽

Negative Capacitance ◽

Subthreshold Slope ◽

Switching Operation ◽

Influence of metal-insulator-semiconductor gate structure on normally-off p-GaN heterojunction field-effect transistors

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2019.125395 ◽

2020 ◽

Vol 532 ◽

pp. 125395 ◽

Cited By ~ 1

Author(s):

Taofei Pu ◽

Xiaobo Li ◽

Taowei Peng ◽

Tian Xie ◽

Liuan Li ◽

...

Keyword(s):

Field Effect ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Gate Structure ◽