Selectively regrown contacts to field-effect transistors with two-dimensional electron-gas channels

IEEE Electron Device Letters ◽

10.1109/55.63024 ◽

1990 ◽

Vol 11 (11) ◽

pp. 535-537 ◽

Author(s):

A. Palevski ◽

P.M. Solomon ◽

T.F. Kuech ◽

M. Tischler ◽

C. Umbach

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Dimensional Electron Gas

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Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors

Applied Physics A ◽

10.1007/s003390100978 ◽

2002 ◽

Vol 75 (3) ◽

pp. 387-389 ◽

Author(s):

R.M. Chu ◽

Y.D. Zheng ◽

Y.G. Zhou ◽

P. Han ◽

B. Shen ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Heterostructure Field Effect Transistors ◽

Dimensional Electron Gas ◽

Gan Heterostructure

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Ga0.51In0.49P/GaxIn1-xAs lattice-matched (x=1) and strained (x=0.85) two-dimensional electron gas field-effect transistors

Semiconductor Science and Technology ◽

10.1088/0268-1242/6/2/006 ◽

1991 ◽

Vol 6 (2) ◽

pp. 103-107 ◽

Author(s):

M Razeghi ◽

F Omnes ◽

P Maurel ◽

Y J Chan ◽

D Pavlidis

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Gas Field ◽

Dimensional Electron Gas ◽

Lattice Matched

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Selectively δ‐doped AlxGa1−xAs/GaAs heterostructures with high two‐dimensional electron‐gas concentrationsn2DEG≥1.5×1012cm−2for field‐effect transistors

Applied Physics Letters ◽

10.1063/1.98722 ◽

1987 ◽

Vol 51 (15) ◽

pp. 1170-1172 ◽

Author(s):

E. F. Schubert ◽

J. E. Cunningham ◽

W. T. Tsang ◽

G. L. Timp

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Dimensional Electron Gas

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Doping Design and Two-Dimensional Electron Gas Density in AlGaN/GaN Heterostructure Field-Effect Transistors for High-Power Applications

10.7567/ssdm.2002.g-1-5 ◽

2002 ◽

Author(s):

Narihiko Maeda ◽

Kotaro Tsubaki ◽

Tadashi Saitoh ◽

Naoki Kobayashi

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Heterostructure Field Effect Transistors ◽

Dimensional Electron Gas ◽

Gan Heterostructure

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Scattering mechanisms limiting two-dimensional electron gas mobility in Al0.25Ga0.75N/GaN modulation-doped field-effect transistors

Journal of Applied Physics ◽

10.1063/1.372432 ◽

2000 ◽

Vol 87 (8) ◽

pp. 3900-3904 ◽

Author(s):

J. Antoszewski ◽

M. Gracey ◽

J. M. Dell ◽

L. Faraone ◽

T. A. Fisher ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Scattering Mechanisms ◽

Gas Mobility ◽

Dimensional Electron Gas

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Influence of surface states on the two-dimensional electron gas in AlGaN/GaN heterojunction field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1530729 ◽

2003 ◽

Vol 93 (3) ◽

pp. 1631-1635 ◽

Author(s):

B. Jogai

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Surface States ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Heterojunction Field Effect Transistors ◽

Dimensional Electron Gas

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Resonance detection of terahertz radiation in nanometer field-effect transistors with two-dimensional electron gas

35th International Conference on Infrared, Millimeter, and Terahertz Waves ◽

10.1109/icimw.2010.5613007 ◽

2010 ◽

Author(s):

K. V. Maremyanin ◽

V. I. Gavrilenko ◽

S. V. Morozov ◽

D. M. Ermolaev ◽

V. E. Zemlyakov ◽

...

Keyword(s):

Terahertz Radiation ◽

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Dimensional Electron Gas ◽

Resonance Detection

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Noise modeling for two-dimensional electron gas field-effect transistors based on accurate charge control characteristics

10.1109/cornel.1989.79827 ◽

2003 ◽

Author(s):

Y. Ando ◽

T. Itoh

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Gas Field ◽

Noise Modeling ◽

Charge Control ◽

Dimensional Electron Gas

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Selectively dopedn-AlxGa1?xAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistors

Applied Physics A Solids and Surface ◽

10.1007/bf00618754 ◽

1984 ◽

Vol 33 (3) ◽

pp. 183-193 ◽

Author(s):

E. F. Schubert ◽

K. Ploog ◽

H. D�mbkes ◽

K. Heime

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

High Mobility ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Dimensional Electron Gas

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Two dimensional electron gas in GaN heterojunction field effect transistors structures with AlN spacer

10.1117/12.811678 ◽

2009 ◽

Author(s):

Qian Fan ◽

Jacob H. Leach ◽

Jinqiao Xie ◽

Umit Ozgur ◽

Hadis Morkoç ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Heterojunction Field Effect Transistors ◽

Dimensional Electron Gas

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