Structural stability of aluminum-boron and aluminum-silicon carbide composite materials at elevated temperatures

1979 ◽  
Vol 15 (1) ◽  
pp. 42-45 ◽  
Author(s):  
G. G. Maksimovich ◽  
A. V. Filipovskii ◽  
E. M. Lyutyi
Keyword(s):  
Silicon Carbide ◽  
Composite Materials ◽  
Structural Stability ◽  
Elevated Temperatures ◽  
Carbide Composite ◽  
Aluminum Silicon Carbide ◽  
Aluminum Silicon

scholarly journals Prediction of Strain Rate of Aluminum/Silicon Carbide Using Gray Level Run-Length Matrices

2017 ◽  
Vol 11 (5) ◽  
Author(s):  
Ahmad E. Eladawi ◽  
Saad A. A. Sayed ◽  
Hammad T. Elmetwally ◽  
Tamer O. Diab
Keyword(s):  
Silicon Carbide ◽  
Strain Rate ◽  
Gray Level ◽  
Run Length ◽  
Aluminum Silicon Carbide ◽  
Aluminum Silicon

H2O catalysis of aluminum carbide formation in the aluminum-silicon carbide system

1991 ◽  
Vol 6 (6) ◽  
pp. 1131-1134 ◽  
Author(s):  
Benji Maruyama ◽  
Fumio S. Ohuchi
Keyword(s):  
Silicon Carbide ◽  
Aluminum Carbide ◽  
Carbide Formation ◽  
Matrix Composites ◽  
Silicon Carbon ◽  
Aluminum Silicon Carbide ◽  
Silicone Carbide ◽  
Microelectronic Components ◽  
Carbide System ◽  
Aluminum Silicon

Aluminum carbide was found to form catalytically at aluminum-silicon carbide interfaces upon exposure to water vapor. Samples, composed of approximately 2 nm thick layers of Al on SiC, were fabricated and reacted in vacuo, and analyzed using XPS. Enhanced carbide formation was detected in samples exposed to 500 Langmuirs H2O and subsequently reacted for 600 s at 873 K. The cause of the catalysis phenomenon is hypothesized to be the weakening of silicon-carbon bonds caused by very strong bonding of oxygen atoms to the silicon carbide surface. Aluminum carbide formation is of interest because of its degrading effect on the mechanical properties of aluminum/silicone carbide reinforced metal matrix composites, as well as its effect on the electrical properties of aluminum metallizations on silicon carbide layers in microelectronic components.

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