Characteristics of the initiation of heterogeneous explosives by a diverging detonation of a thin donor charge

1987 ◽  
Vol 23 (1) ◽  
pp. 75-77
Author(s):  
A. I. Pogrebov ◽  
V. I. Sdobnov ◽  
V. I. Tarzhanov
Keyword(s):  

2020 ◽  
Vol 6 (1) ◽  
Author(s):  
Michael W. Swift ◽  
Hartwin Peelaers ◽  
Sai Mu ◽  
John J. L. Morton ◽  
Chris G. Van de Walle

AbstractSpin qubits based on shallow donors in silicon are a promising quantum information technology with enormous potential scalability due to the existence of robust silicon-processing infrastructure. However, the most accurate theories of donor electronic structure lack predictive power because of their reliance on empirical fitting parameters, while predictive ab initio methods have so far been lacking in accuracy due to size of the donor wavefunction compared to typical simulation cells. We show that density functional theory with hybrid and traditional functionals working in tandem can bridge this gap. Our first-principles approach allows remarkable accuracy in binding energies (67 meV for bismuth and 54 meV for arsenic) without the use of empirical fitting. We also obtain reasonable hyperfine parameters (1263 MHz for Bi and 133 MHz for As) and superhyperfine parameters. We demonstrate the importance of a predictive model by showing that hydrostatic strain has much larger effect on the hyperfine structure than predicted by effective mass theory, and by elucidating the underlying mechanisms through symmetry analysis of the shallow donor charge density.



1985 ◽  
Vol 59 ◽  
Author(s):  
A. J. Tavendale ◽  
A. A. Williams ◽  
D. Alexiev ◽  
S. J. Pearton

ABSTRACTTransport of the hydrogen-related, acceptor-compensating defect has been observed in reverse-bias annealed Al-gate Schottky and n+-P diodes from hydrogenated, B-doped p-Si. Secondary ion mass spectroscopy (SIMS) profiling (deuterium substitution) confirmed field-aided migration. Significant differences in field transport (and thermal diffusion) between diodes from Hand D-treated p-Si(B) qualitatively indicates a monatomic species. The effect is interpreted as field drift of a positively charged species, possibly H+, with a donor charge state in the upper-half band gap, in conflict with long-held theory predicting very deep level activity. Acceptor compensation is unstable under minority (electron) carrier injection by forward bias or illumination at 25°C, supporting the acceptor-protonic trap pair model (A-H+) of Sah, Pan and Hsu [J. Appl. Phys. 57, 5148 (1985)].



2012 ◽  
Author(s):  
Alexandre Lefrancois ◽  
Jacques Petit ◽  
Sebastien Dumant ◽  
Frederic Sinatti ◽  
Patrick Rey


2008 ◽  
Vol 20 (19) ◽  
pp. 6208-6216 ◽  
Author(s):  
Gang Qian ◽  
Bo Dai ◽  
Min Luo ◽  
Dengbin Yu ◽  
Jie Zhan ◽  
...  


2014 ◽  
Vol 1 (3) ◽  
pp. n/a-n/a
Author(s):  
Ming-Fai Lo ◽  
Tsz-Wai Ng ◽  
Hin-Wai Mo ◽  
Xian-Feng Chen ◽  
Chun-Sing Lee








2014 ◽  
Vol 1 (3) ◽  
pp. 1300082 ◽  
Author(s):  
Ming-Fai Lo ◽  
Tsz-Wai Ng ◽  
Hin-Wai Mo ◽  
Xian-Feng Chen ◽  
Chun-Sing Lee


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