Effect of nonmetallic atoms on the electric properties of high-melting compounds of transition metals

1964 ◽  
Vol 1 (4) ◽  
pp. 231-236 ◽  
Author(s):  
S. N. L'vov ◽  
V. F. Nemchenko ◽  
G. V. Samsonov
2007 ◽  
Vol 118 (5-6) ◽  
pp. 959-972 ◽  
Author(s):  
Angelika Baranowska ◽  
Magdalena Siedlecka ◽  
Andrzej J. Sadlej

1961 ◽  
Vol 5 ◽  
pp. 13-32 ◽  
Author(s):  
Hans Nowotny

AbstractThis paper deals with some recent investigations on beryllides, borides, carbides, nitrides, aluminides, and germanides of transition metals as well as with combinations of these with special reference to hafnium and uranium compounds. The results will be discussed within the general field of refractories excluding the class of typical oxides. An intense study has revealed the influence of metalloid impurities (for instance carbon, nitrogen, and oxygen on high-melting borides and silicides or nitrogen and oxygen or carbides, respectively). Very often small amounts of such metalloids introduced by preparation techniques, like hot-pressing, sintering, and powder-reaction methods may change the constitution of the system.


Author(s):  
R.W. Carpenter

Interest in precipitation processes in silicon appears to be centered on transition metals (for intrinsic and extrinsic gettering), and oxygen and carbon in thermally aged materials, and on oxygen, carbon, and nitrogen in ion implanted materials to form buried dielectric layers. A steadily increasing number of applications of microanalysis to these problems are appearing. but still far less than the number of imaging/diffraction investigations. Microanalysis applications appear to be paced by instrumentation development. The precipitation reaction products are small and the presence of carbon is often an important consideration. Small high current probes are important and cryogenic specimen holders are required for consistent suppression of contamination buildup on specimen areas of interest. Focussed probes useful for microanalysis should be in the range of 0.1 to 1nA, and estimates of spatial resolution to be expected for thin foil specimens can be made from the curves shown in Fig. 1.


Author(s):  
Stuart A. Maloy

MoSi2 has recently been investigated as a potential material for high temperature structural applications. It has excellent oxidation resistance up to 1700°C, a high melting temperature, 2030°C, and a brittle-to-ductile transition temperature at 900-1000°C. WSi2 is isomorphous with MoSi2 and has a body-centered tetragonal unit cell of the space group 14/mmm. The lattice parameters are a=3.20 Å and c=7.84 Å for MoSi2 and a=3.21 Å and c=7.88 Å for WSi2. Therefore, WSi2 was added to MoSi2 to improve its strength via solid solution hardening. The purpose of this study was to investigate the slip systems in polycrystalline MoSi2/WSi2 alloys.


1971 ◽  
Vol 32 (C1) ◽  
pp. C1-74-C1-75 ◽  
Author(s):  
K. ENDO ◽  
Y. FUJITA ◽  
R. KIMURA ◽  
T. OHOYAMA ◽  
M. TERADA

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