An unusual promotion of the redox behaviour of CeO2-ZrO2 solid solutions upon sintering at high temperatures

1995 ◽  
Vol 33 (1-2) ◽  
pp. 193-200 ◽  
Author(s):  
G. Balducci ◽  
P. Fornasiero ◽  
R. Di Monte ◽  
J. Kaspar ◽  
S. Meriani ◽  
...  
Keyword(s):  
High Temperatures ◽  
Solid Solutions ◽  
Redox Behaviour

Normal and anomalous nuclear spin-lattice relaxation at high temperatures in Sc-H(D), Y-H, and Lu-H solid solutions

1995 ◽  
Vol 51 (6) ◽  
pp. 3503-3511 ◽  
Author(s):  
R. G. Barnes ◽  
J.-W. Han ◽  
D. R. Torgeson ◽  
D. B. Baker ◽  
M. S. Conradi ◽  
...  
Keyword(s):  
High Temperatures ◽  
Solid Solutions ◽  
Nuclear Spin ◽  
Lattice Relaxation ◽  
Spin Lattice Relaxation ◽  
Spin Lattice ◽  
Nuclear Spin Lattice Relaxation

Formation of Buried Layers of (SiC)1-x(AINT)x in 6H-SiC Using Ion-Beam Synthesis

1996 ◽  
Vol 438 ◽  
Author(s):  
R. A. Yankov ◽  
N. Hatzopoulos ◽  
W. Fukarek ◽  
M. Voelskow ◽  
V. Heera ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
High Temperatures ◽  
Solid Solutions ◽  
Ion Beam ◽  
Compound Semiconductors ◽  
Reflectance Spectroscopy ◽  
Rutherford Backscattering ◽  
Infrared Reflectance ◽  
Highly Sensitive ◽  
Buried Layers

AbstractSolid solutions of SiC and III-V compound semiconductors are recognized as promising materials for novel semiconductor applications. This paper reports on experiments which explore the possibility of synthesizing thin buried layers of (SiC)l-x(AIN)x having composition of about x = 0.2 by co-implanting N+ and Al+ ions into 6H-SiC wafers maintained at temperatures in the range 200 - 800°C. Structural and compositional evaluation of as-implanted samples was carried out using a combination of Rutherford backscattering/channelling spectrometry and infrared reflectance spectroscopy. It is shown that the structures are highly sensitive to the substrate temperature. The use of sufficiently high temperatures (400 - 800°C) enables the crystallinity of the host material as well as relatively low damage levels to be maintained during implantation. The formation of AI-N bonds within the implanted layers is also confirmed over the temperature range studied.

Thermal diffusivity of Y–Ho system solid solutions at high temperatures

2016 ◽  
Vol 54 (2) ◽  
pp. 206-209 ◽  
Author(s):  
A. D. Ivliev ◽  
A. A. Kurichenko ◽  
I. M. Vekshin
Keyword(s):  
Thermal Diffusivity ◽  
High Temperatures ◽  
Solid Solutions

scholarly journals Steady State Deformation of Cu-Mn Solid Solutions at High Temperatures

1978 ◽  
Vol 42 (4) ◽  
pp. 363-368
Author(s):  
Shiomi Kikuchi ◽  
Shigeki Matsumura ◽  
Masao Adachi
Keyword(s):  
Steady State ◽  
High Temperatures ◽  
Solid Solutions

Thermoelectric powers of primary solid solutions of Au, Cd, Zn, In, Ge, Tl, and Sb in silver

1968 ◽  
Vol 46 (15) ◽  
pp. 1711-1719 ◽  
Author(s):  
L. S. Wright
Keyword(s):  
Thermoelectric Power ◽  
High Temperatures ◽  
Solid Solutions ◽  
Diffusion Region ◽  
Phonon Drag ◽  
Temperature Range ◽  
Straight Line ◽  
Line Diffusion

The thermoelectric powers and resistivities of primary solid solutions of Au, Cd, Zn, In, Ge, Tl, and Sb in silver were measured over the temperature range 90–240 °K. The characteristic thermoelectric powers of the impurities have been determined in the diffusion region by the Nordheim–Gorter relation. Furthermore, the straight line (diffusion thermoelectric power versus temperature) arising at high temperatures has been extrapolated into the phonon-drag region and Nordheim–Gorter plots have been made using points from this extrapolation.

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