Effect of oxygen adsorption on the kinetics of radical-recombination luminescence of phosphors

1970 ◽  
Vol 13 (9) ◽  
pp. 1224-1226
Author(s):  
Yu. A. Sivov ◽  
V. V. Styrov ◽  
L. I. Yagnova
Keyword(s):  
Oxygen Adsorption ◽  
Recombination Luminescence ◽  
Radical Recombination ◽  
Effect Of Oxygen ◽  
Kinetics Of

The decay kinetics of radical-recombination luminescence in crystal phosphors

1973 ◽  
Vol 16 (12) ◽  
pp. 1633-1635
Author(s):  
Yu. M. Naslednikov ◽  
V. V. Styrov ◽  
V. D. Khoruzhin
Keyword(s):  
Decay Kinetics ◽  
Recombination Luminescence ◽  
Radical Recombination ◽  
Kinetics Of

Certain effects in the kinetics of radical-recombination luminescence

1969 ◽  
Vol 12 (12) ◽  
pp. 1647-1648
Author(s):  
Yu. A. Markin ◽  
Yu. A. Sivov ◽  
V. A. Sokolov ◽  
V. V. Styrov
Keyword(s):  
Recombination Luminescence ◽  
Radical Recombination ◽  
Kinetics Of

The theory of radical recombination luminescence communication 3. Kinetics of radical recombination luminescence

1971 ◽  
Vol 20 (8) ◽  
pp. 1562-1569
Author(s):  
F. F. Vol'kenshtein ◽  
Yu. A. Markin ◽  
Yu. A. Sivov ◽  
V. V. Styrov
Keyword(s):  
Recombination Luminescence ◽  
Radical Recombination ◽  
Kinetics Of

Kinetics of the radical-recombination luminescence of crystal phosphors on excitation by atomic oxygen

1973 ◽  
Vol 16 (11) ◽  
pp. 1595-1599
Author(s):  
Yu. V. Volkov ◽  
V. V. Styrov
Keyword(s):  
Atomic Oxygen ◽  
Recombination Luminescence ◽  
Radical Recombination ◽  
Kinetics Of

Kinetics of radical-recombination luminescence of crystal phosphors under excitation by atomic nitrogen

1973 ◽  
Vol 16 (8) ◽  
pp. 1108-1112
Author(s):  
B. G. Urusov ◽  
V. V. Styrov ◽  
V. A. Sokolov
Keyword(s):  
Atomic Nitrogen ◽  
Recombination Luminescence ◽  
Radical Recombination ◽  
Kinetics Of

Intensity kinetics of the activator bands for radical-recombination luminescence of phosphors

1970 ◽  
Vol 13 (8) ◽  
pp. 1010-1014
Author(s):  
V. V. Styrov ◽  
Yu. A. Sivov ◽  
Yu. A. Markin ◽  
Yu. M. Naslednikov
Keyword(s):  
Recombination Luminescence ◽  
Radical Recombination ◽  
Kinetics Of

THE EFFECT OF OXYGEN ADSORPTION ON THE CONDUCTIVITY OF PBTE FILMS.

2020 ◽  
Vol 6 (8(77)) ◽  
pp. 21-23
Author(s):  
S.N. Sarmasov ◽  
R.Sh. Rahimov ◽  
T.Sh. Abdullayev
Keyword(s):  
Spectral Region ◽  
Current Flow ◽  
Oxygen Adsorption ◽  
Tunneling Mechanism ◽  
Pn Junction ◽  
Flow Through ◽  
Pn Junctions ◽  
Effect Of Oxygen

The effect of oxygen adsorption on the conductivity of PbTe films is studied. Pn junctions based on PbTe films are photosensitive in the IR spectral region with a maximum photosensitivity of 𝜆𝑚𝑎𝑥 microns. The tunneling mechanism of current flow through the pn junction is shown.

The interaction of oxygen with clean metal surfaces

1955 ◽  
Vol 227 (1170) ◽  
pp. 387-399 ◽  
Keyword(s):  
Oxide Layer ◽  
Oxygen Adsorption ◽  
Single Site ◽  
Rate Expression ◽  
Hydrogen Form ◽  
Metal Atoms ◽  
Kinetics Of ◽  
Clean Metal ◽  
Cu And Zn ◽  
Rapid Adsorption

Isobars for the adsorption of O 2 , H 2 and CO on evaporated films of Rh, Mo, W and Fe, of Ch and CO on Ta, Pt and Pd, and of O 2 on Cu, Al and Zn have been obtained. On Rh, Mo and W the rapid adsorption of O 2 and H 2 at -183° C results in formation of monolayers with one atom per surface atom. On Ta, Pt, Pd, Cu, Al and Zn oxygen, and on Fe hydrogen form similar monolayers, but on Fe oxygen forms several layers of oxide. On Rh, Mo and possibly Ta the fast CO chemisorption corresponds to a two-site mechanism; on W and Fe it lies between that for a single and a two-site mechanism; on Pt and Pd single-site adsorption may take place. Kinetics of slow oxygen uptakes have been followed on Rh, Mo, W, Ta, Fe, Cu and Zn. With Rh, Mo, W, Ta and Zn it is believed that formation of the first oxide layer has been observed, and the rate expression is velocity ∝√{ p ) e -∝ v / RT , where v is the adsorbed volume and ∝ is a constant. The suggested mechanism is interchange of adsorbed oxygen atoms with underlying metal atoms, whereby metal atoms are exposed for further oxygen adsorption. On Cu and Fe formation of up to six and ten oxide layers respectively have been observed, and the rate expressions (u ∝ p 0.75 / v 2 and u ∝ p 0.2 e ∝'/ v ) have been interpreted in terms of the theory of Cabrera & Mott (1948).

Effect of oxygen adsorption on instability in electrical resistance ofCdSe0.6Te0.4thin films

1989 ◽  
Vol 40 (14) ◽  
pp. 9767-9771 ◽  
Author(s):  
P. J. Sebastian ◽  
V. Sivaramakrishnan
Keyword(s):  
Electrical Resistance ◽  
Oxygen Adsorption ◽  
Effect Of Oxygen
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